70V657S12DRI Allicdata Electronics
Allicdata Part #:

800-2318-ND

Manufacturer Part#:

70V657S12DRI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 1.125M PARALLEL 208PQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 1.125Mb (...
DataSheet: 70V657S12DRI datasheet70V657S12DRI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 1.125Mb (32K x 36)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-BFQFP
Supplier Device Package: 208-PQFP (28x28)
Base Part Number: IDT70V657
Description

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Memory is an important component of the computer and its applications. The 70V657S12DRI is a type of memory designed specifically for applications that require high-speed, volatile random access. It is composed of 657 MOS (Metal Oxide Semiconductor) memory cells arranged in a single row, with each cell being 12 bits wide. The memory is categorized as static RAM (SRAM) because it does not require refreshing, which is an advantage in systems where minimizing power consumption is a priority.

The 70V657S12DRI is mainly used in industrial applications such as printers, cache memories, application-specific logic, Ethernet switches, and PC memories. Additionally, this type of memory can be used in medical applications, embedded systems, and aerospace applications.

The device has no internal control logic and therefore relies on being enabled and disabled when required by using external signals. For example, the enable signal is used to determine the data direction (input or output) for the memory cell. Input signals allow for data to be written into the memory cells and output signals allow for data to be read from the memory cells.

The 70V657S12DRI contains an embedded Read/Write protect function that can be used to protect data which is already stored in the memory cells. This is useful in applications which require memory security. The 70V657S12DRI also contains a Data Strobe signal that can be used to enable or disable data output.

The working principle of the 70V657S12DRI is based on the principles of static RAM. This type of memory uses a combination of transistors and capacitors in each memory cell to store the data. The transistors are used to control the input and output signals, while the capacitors store the data. The transistors are also used to control the charging and discharging of the capacitors for reading and writing data respectively.

The 70V657S12DRI also contains an address counter logic, which is used to keep track of the address of the current memory location. This allows the system to access any memory location without having to manually track all of the addresses. The address counter will also increment the address whenever a read or write operation is completed.

Overall, the 70V657S12DRI is an ideal memory for applications that require high performance, low power consumption, and memory security. Its combination of internal functions and easy external input and output control makes it a great choice for many applications. Its small size also makes it ideal for applications where space is limited.

The specific data is subject to PDF, and the above content is for reference

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