71024S20TYG8 Integrated Circuits (ICs) |
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Allicdata Part #: | 800-1416-2-ND |
Manufacturer Part#: |
71024S20TYG8 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 1M PARALLEL 32SOJ |
More Detail: | SRAM - Asynchronous Memory IC 1Mb (128K x 8) Paral... |
DataSheet: | 71024S20TYG8 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 1Mb (128K x 8) |
Write Cycle Time - Word, Page: | 20ns |
Access Time: | 20ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 32-BSOJ (0.300", 7.62mm Width) |
Supplier Device Package: | 32-SOJ |
Base Part Number: | IDT71024 |
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Memory
71024S20TYG8 memory is an ultra-high-speed static random access memory (SRAM) that is developed to provide faster data access while optimizing performance and power. It is one of the latest advancements in semiconductor technology and is designed to provide optimized performance with low power consumption. This memory solves the problem of data access in mission-critical applications while offering unprecedented performance and reliability.
The 71024S20TYG8 memory provides access to the data stored in different layers in quick and efficient manner. It utilizes a Multi-Layer Interconnect (MLI) that efficiently transmits the data between the processor and the memory. The MLI’s interconnect structure and on-die bus are capable of providing significantly higher data rate than traditional memory technologies, thus enabling the processor to access data faster. This memory also utilizes on-die power amplifying technology, which helps minimize power consumption without sacrificing performance.
The 71024S20TYG8 memory consists of two primary types of components, the PCM (Phase Change Memory) array and the logic array, which operate together to store and access data. The PCM array consists of a number of cells, each of which contains two switches, which can be set in either ‘on’ or ‘off’ state. Thus, the PCM array can store either a ‘1’ or a ‘0’ while the logic array stores the code that directs the processing of data stored in the PCM array.
The 71024S20TYG8 memory achieves faster data access by utilizing multiple on-die buses with the help of its sophisticated architecture. The buses are capable of transferring data four times faster than any other chip-level memory. The logic array also helps in executing instructions to manipulate data stored in the PCM array ten times faster than a traditional SRAM. Additionally, as the memory uses state-of-the-art on-die power amplifying technology, it consumes significantly lower power compared to DRAM.
With its low power consumption and fast data access, the 71024S20TYG8 memory is ideal for mission-critical applications. It can be used in high-end computing and networking systems, queuing systems, real-time databases, and high-end embedded systems. It is also used in audio/video streaming, voice recognition systems, and virtual reality applications, due to its fast data transfer rates. This memory is also used in storage systems such as solid-state drives and tape systems as it offers significant power savings.
The 71024S20TYG8 memory is designed to provide improved reliability and faster data access. The sophisticated architecture and innovative technologies used in this memory help reduce power consumption and improve performance, making it an ideal choice for mission-critical applications. With its fast data access and low power consumption, this memory is widely used in a variety of systems across a range of industries.
The specific data is subject to PDF, and the above content is for reference
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