7164L70DB

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7164L70DB is a type of semiconductor memory which adopts dynamic random access memory (DRAM) technology, and use MOS transistor as the memory elements in the memory array. It includes low power consumption, high speed and good packaging. It has a wide range of applications in computers, video game consoles, mobile phones, digital audio players, digital cameras, industrial control, automotive electronics, medical electronics, etc. It is also used for telecommunication system and other special areas.

The dynamic random access memory, or DRAM, is one of the most commonly used types of semiconductor memory today. It is a type of randomly addressable memory, that stores each bit of data in a tiny capacitor located in a memory array of cells. The capacitors are formed from metal oxide-silicon (MOS) transistors and are highly sensitive to changes in temperature, electrical field, current and other factors. This is why they need to be refreshed periodically in order to maintain the data. The 7164L70DB is a particular type of DRAM that operates by refreshing the memory cells at specific intervals.

The 7164L70DB is an example of a devices that employ a "page-mode" technique which involves activating only a single row in the memory array at a time and then accessing the same row multiple times in order to read or write information at faster speeds than would be possible with a standard random-access approach. This is made possible in part by the fact that the capacitors in the memory cells can hold charges for longer than if they had been accessing from different rows. As a result, page-mode DRAMs can achieve both read and write speeds of up to five times the speed of conventional random-access DRAMs.

The 7164L70DB is a synchronous dynamic random access memory which means that it can read and write data simultaneously. It is also a synchronous device, meaning that it follows a set clock frequency which can either be supplied from an external source or from the device itself. This clock frequency determines the speed at which the device can transfer data. For the 7164L70DB, the maximum possible clock frequency is 200MHz.

The architecture of the 7164L70DB is based on 2-bank synchronous DRAMs. The memory cell array is divided into two banks, each of which can be accessed independently. Each bank can contain up to 16 Megabytes (MBs) or 32 Megawords (MWs) of data. The device also has an integrated timing and control logic which allows it to synchronize the access to each of the banks with the external clock frequency and control any refresh operations that may be required.

The 7164L70DB also features an error correcting code (ECC) system which is designed to detect and correct single-bit errors that may occur during data transfer. The ECC system adds a small amount of overhead to the data transfer rate in order to check for errors, but this is typically negligible in comparison to the speed improvement from the page-mode technology. The device also supports multiple types of error recovery and retry mechanisms, which can help reduce the chance of data loss due to transient errors.

The 7164L70DB is capable of very fast access times and is one of the top choices for applications that require high performance memory. It is well suited for a wide range of applications, including computers, video game consoles, mobile phones, digital audio players, digital cameras, industrial control, automotive electronics, medical electronics, and telecom systems, among others. Despite its excellent performance, the 7164L70DB is a fairly simple device to use and integrate into existing systems.

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