71T75602S166BGG

71T75602S166BGG belongs to a type of computer memory, more specifically to the category of synchronous dynamic random access memory (SDRAM). It is a double data rate (DDR) Synchronous DRAM with a capacity of 18 Meg x 72 bits. It is made with a 0.18 µm CMOS process, operates at 2.5 volts, and has a package size of 100 pin TSOP-I.

This form of memory provides improved system performance and increased transaction speed for desktop and mobile computers due to its ability to compress and store data in a very short amount of time. It is notable for its degree of low power consumption and its suitability for computing processes that require fast data transfer. Additionally, its smaller size makes it ideal for machines with limited real estate or space constraints.

The working principle of 71T75602S166BGG can be described in two specific parts: content addressable memory and cyclical redundancy checks. Content addressable memory is used to quickly store and access data with minimal latency and is known for its ability to quickly read data that is located in multiple columns. Specifically, the content addressable memory used in the 71T75602S166BGG stores data in a 2-dimensional array of memory cells, allowing for fast search and retrieval of stored data.

In addition to content addressable memory, cyclical redundancy checks are used to ensure accuracy and reliability within the stored data. These checks are used to verify the integrity of the content addressable memory, and they ensure that there is no possibility of error in the memory either when the data is stored or when it is retrieved. The cyclical redundancy checks also provide additional protection against external interference and power perturbation.

71T75602S166BGG is widely used in mission critical computing applications such as military and industrial systems that require high performance. It is an excellent choice in these demanding environments since it provides the necessary speed and accuracy while minimizing power consumption. Additionally, its design also reduces the amount of space required to perform its functions, making it highly efficient and cost-effective.

In summary, 71T75602S166BGG is a high-performance synchronous dynamic random access memory that is both versatile and efficient. Its ability to store and access data rapidly, its low power consumption, and its suitability for mission-critical computing applications, make it an excellent memory choice for a wide variety of applications.