71T75902S75PFGI

Series:	--
Packaging:	Tube
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Synchronous ZBT
Memory Size:	18Mb (1M x 18)
Write Cycle Time - Word, Page:	--
Access Time:	7.5ns
Memory Interface:	Parallel
Voltage - Supply:	2.375 V ~ 2.625 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	100-LQFP
Supplier Device Package:	100-TQFP
Base Part Number:	IDT71T75902

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

71T75902S75PFGI is a new generation of memory technology which offers a wide variety of features and benefits for use in applications such as industrial automation, medical diagnostics, medical imaging, defense and aerospace, automotive and automotive Embedded systems. It combines high speed, low power operation and robust features that make it an ideal choice for a wide range of applications.

Application Field

71T75902S75PFGI is widely applied in different industries, including industrial automation, medical diagnostics and medical imaging, defense and aerospace, automotive and automotive embedded systems.

• In industrial automation, its high speed and robust features make it an ideal choice for production automation and robotic systems.
• In medical diagnostics, 71T75902S75PFGI can be used for medical imaging and diagnostics to provide accurate and precise results.
• In defense and aerospace applications, 71T75902S75PFGI can be used to enhance the accuracy and performance of missile guidance systems, UAVs and other sophisticated aircrafts.
• In automotive and automotive embedded systems, its superior reliability and durability make it ideal for onboard navigation and controlling systems.

Working Principle

71T75902S75PFGI is based on a flash memory technology which utilizes a 3D dynamic logic memory cells. This memory architecture utilizes a set of data links representing the three dimension logic cells enabling the simultaneous storage and processing of large array of bits. The technology is designed to be incredibly fast, allowing for increased processing speeds when compared to other memory technologies.The flash memory cell also utilizes a multi-level cell (MLC) architecture that utilizes four transistor cells for each bit of information. This provides greater storage capacity as well as increased endurance and robustness. The technology employs a number of features to ensure the reliability of the data stored in the memory cells, including ECC (error correcting code) error management, write protection and redundancy registers.

Conclusion

71T75902S75PFGI is a versatile and efficient technology that offers high speed and low power consumption. Its wide array of features makes it an ideal choice for a variety of applications that require reliable and durable memory solutions. Its 3D dynamic logic cells and multi-level cell (MLC) architecture provides increased storage capacity, endurance and robustness. With its reliable and robust design, 71T75902S75PFGI is perfect for use in a wide range of field applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description