71T75802S166BGI8

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Memory is an essential part of computer systems and applications, as it provides the means by which data and instructions are stored and accessed. It is typically divided into two types: static and dynamic. Static memory refers to dedicated circuitry (e.g., flip-flops, shift registers), while dynamic memory refers to memory that requires periodic refresh. 71T75802S166BGI8 is a dynamic random access memory (DRAM) module from Toshiba that is widely used in a range of applications.

The 71T75802S166BGI8 modules have a total volume of 8GB and a maximum operating temperature of 95°C. The memory module features a dual-channel design, with two channels of 72-bit data paths, and is organized as x72 bits. This type of configuration is ideal for systems that can support multiple transactions for concurrent operations. Additionally, the memory module also has an error-correcting code (ECC) that ensures data integrity by detecting and correcting single-bit errors.

The 71T75802S166BGI8 memory modules are designed for applications that require a high-performance, low-power solution, such as embedded systems, medical equipment, surveillance systems and in-vehicle infotainment systems. The modules can also be used in servers for applications such as web hosting, virtualization and distributed computing environments. Additionally, the memory modules can be used in large-scale storage systems that require sustained I/O throughput.

The working principle of 71T75802S166BGI8 memory modules is based on DRAM technology. DRAM is a form of volatile memory, which means that the data stored in the memory is lost when the power supply is disconnected. This is different from non-volatile memory, such as flash memory or hard disk drive (HDD) storage, which are able to retain data even when power is lost. DRAM memory is arranged in a matrix of cells, which consist of two transistors and a memory capacitor. Each cell can store one bit of data (1 or 0). To read data from the memory, the transistors are activated and the charge in the capacitor is measured. To write data to the memory, the transistors are activated and the charge in the capacitor is be switched.

Unlike other forms of memory, DRAM memory is designed to be refreshed on an ongoing basis, to prevent data loss. The timing of the refresh operation is controlled by the system’s memory controller. When a DRAM memory cell is read, the charge in the capacitor is gradually discharged, and therefore needs to be periodically recharged to maintain the data. During the refresh operation, each row of memory cells is read and then rewritten, using the same data, so that the capacitor can be recharged.

The 71T75802S166BGI8 memory modules provide a high-performance, low-power memory solution for a range of applications. The modules are based on DRAM technology, which is inherently volatile, but can be reliably retained by periodically refreshing the memory cells. The modules are ideal for systems that require sustained I/O throughput, such as large-scale storage systems and distributed computing environments.

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