71T75602S166PFG Allicdata Electronics
Allicdata Part #:

800-2322-ND

Manufacturer Part#:

71T75602S166PFG

Price: $ 11.47
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 18M PARALLEL 100TQFP
More Detail: SRAM - Synchronous ZBT Memory IC 18Mb (512K x 36) ...
DataSheet: 71T75602S166PFG datasheet71T75602S166PFG Datasheet/PDF
Quantity: 563
1 +: $ 10.42650
10 +: $ 9.65538
25 +: $ 9.52084
50 +: $ 9.40415
100 +: $ 8.24173
250 +: $ 7.88543
500 +: $ 7.83286
Stock 563Can Ship Immediately
$ 11.47
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT71T75
Supplier Device Package: 100-TQFP (14x20)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375 V ~ 2.625 V
Memory Interface: Parallel
Access Time: 3.5ns
Series: --
Clock Frequency: 166MHz
Memory Size: 18Mb (512K x 36)
Technology: SRAM - Synchronous ZBT
Memory Format: SRAM
Memory Type: Volatile
Part Status: Active
Packaging: Tray 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is an essential aspect of modern computing technology, forming the basis for how computers store, manage and process data. The 71T75602S166PFG is a memory device developed by Toshiba, designed to provide users with faster storage, higher accuracy and higher performance than conventional memory types. This article will provide an overview of application fields and working principles behind the 71T75602S166PFG memory device.

The 71T75602S166PFG is a DRAM (dynamic random access memory) device, which is widely used in many applications, where fast read and write speeds are required. The device contains 2,048 memory cells organized in small blocks of 128 cells. Each cell contains a transistor and a capacitor, which stores the data bit. The device is designed to deliver a maximum refresh rate of 166MHz, resulting in a maximum access speed of about 1 ns.

The main application of the 71T75602S166PFG is to provide high-speed memory for cache memories and high-end embedded applications. The device has a very low power consumption compared to other DRAM devices and features a proprietary ECC (error-checking and correction) algorithm, which allows users to detect and keep errors in memory at a minimum. It is also suitable for memory storage in data centers. and other memory-intensive applications.

The 71T75602S166PFG contains a number of integrated circuits, which are responsible for controlling the memory cells. The device includes four data input ports and four data output ports. Data is written to the cells through the data input ports and is read from the cells through the data output ports. The device is also equipped with a 16-bit address bus, which is used to specify the location of the data in the memory cells.

In order to keep the memory cells operating reliably and efficiently, the device features a built-in refresh circuit. This circuit constantly reads the data from the cells, refreshes it and stores it back into the cells. This helps to maintain the accuracy of the stored data. The refresh circuit also helps to prevent data loss and corruption, as it keeps the cells active and in optimal condition.

The 71T75602S166PFG is a powerful and reliable memory device, and is widely used in embedded applications, data centers and other memory-intensive applications. It features a low power consumption, fast data access speeds and an integrated ECC algorithm. In addition to this, the built-in refresh circuit helps to keep the data stable and accurate, preventing data loss and corruption.

The specific data is subject to PDF, and the above content is for reference

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