71T75802S100BG Allicdata Electronics
Allicdata Part #:

71T75802S100BG-ND

Manufacturer Part#:

71T75802S100BG

Price: $ 18.85
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 18M PARALLEL 119PBGA
More Detail: SRAM - Synchronous ZBT Memory IC 18Mb (1M x 18) Pa...
DataSheet: 71T75802S100BG datasheet71T75802S100BG Datasheet/PDF
Quantity: 1000
84 +: $ 17.13820
Stock 1000Can Ship Immediately
$ 18.85
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT71T75
Supplier Device Package: 119-PBGA (14x22)
Package / Case: 119-BGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375 V ~ 2.625 V
Memory Interface: Parallel
Access Time: 5ns
Series: --
Clock Frequency: 100MHz
Memory Size: 18Mb (1M x 18)
Technology: SRAM - Synchronous ZBT
Memory Format: SRAM
Memory Type: Volatile
Part Status: Active
Packaging: Tray 
Description

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Memory technology is one of the most important aspects of computer engineering. With the growth of computer technology, the capabilities of memory components such as 71T75802S100BG have become increasingly important. This component, which is similar to other static random access memories, is a floating-gate MOS field-effect transistor, or FET-CK. In addition to providing a means for memory storage, 71T75802S100BG also has specialized applications in certain types of systems, such as point-of-sale terminals, industrial and laboratory equipment, and medical devices.

One of the main applications of 71T75802S100BG is point-of-sale terminals, where it is used to store information such as customer credit cards and product prices. As customers purchase items in a retail store, the details are stored in the memory component, which is then transferred to a central database. This ensures that customer data is communicated and stored in a secure fashion.

In industrial and laboratory settings, 71T75802S100BG memory can be used to store data generated by high-tech devices such as spectrometers and other instruments for measuring various properties. Additionally, this type of memory is also used in medical devices, such as pacemakers, to maintain vital information about a user’s health.

The working principle of 71T75802S100BG memory is relatively straightforward. It consists of two layers of transistors, one layer called the gate and the other layer called the channel. The channel is responsible for storing electrical charge, while the gate serves as a control point for the current flowing between the two layers. As a current is applied to the gate, charge is transferred from the channel to the gate and this transfers the data stored in the memory component.

The design and capabilities of 71T75802S100BG memory make it ideal for many applications. Its low power consumption and small size make it an attractive option for designers looking to conserve space and power. Additionally, the FET-CK based transistor design helps to reduce signal noise and enhance reliability. As technology continues to advance and new applications become available, 71T75802S100BG memory will remain a valuable component in the pursuit of reliable memory technology.

The specific data is subject to PDF, and the above content is for reference

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