Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	1Mb (64K x 16)
Write Cycle Time - Word, Page:	10ns
Access Time:	10ns
Memory Interface:	Parallel
Voltage - Supply:	3.15 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-LFBGA
Supplier Device Package:	48-FBGA (7x7)
Base Part Number:	IDT71V016

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Application Field and Working Principle of 71V016SA10BFGI

Introduction

71V016SA10BFGI belongs to the family of nonvolatile static random access memory (nvSRAM) which combines the low-power features of SRAM with the non-volatility of flash memory. This type of memory is widely used in many industries such as automotive, industrial control, medical and aerospace. With fast write/read access time, it can be used to store data in applications requiring frequent write/read operations.

Application Field

71V016SA10BFGI is designed to help the users store large amount of data in a wide variety of applications. It can be used in automated processes and industrial controllers, robotics and other similar applications. It is also used in automotive systems and many high-tech industries as a reliable non-volatile memory. Due to its non-volatility, 71V016SA10BFGI is also used in safety-critical applications such as aerospace, military and medical equipment. It can be used to provide data storage in mission-critical applications. In addition, it can also be used for storing program code and parameters in digital systems.

Working Principle

71V016SA10BFGIis constructed of an array of static RAM cells that are linked to the bit lines in the array and the wordlines, respectively. In the nvSRAM, the sense amplifier is connected to both the memory array and the EEPROM, while the row decoder and buffer are connected only to the memory array. The core of the system consists of an array of static RAM cells. The cells are organized into a matrix, with one line by one line, and each row consists of 16 bits. Each bit in the cell can store one bit of information, either zero or one. The cell is connected to two bit lines, the sense amplifier, and a write or read circuit. When information is written to or read from a cell, the write and read circuits send a signal to the appropriate bit line, activating the device. The data is then transferred to and from the SRAM memory cell using the appropriate bit lines. When the data is read from the memory cell, the sense amplifier activates the appropriate bit and stores the data in the EEPROM. When the device is inactive, the EEPROM will continue to maintain the data stored in the SRAM memory cell. When power is removed, the SRAM memory cells lose their stored data but the data is kept intact in the EEPROM. When power is applied again, the data is read from the EEPROM and transferred back to the SRAM memory cells.

Conclusion

71V016SA10BFGI nonvolatile static RAM memory is a device that allows the user to store large amounts of data in a wide variety of applications. Its high capacity, fast write/read access time, non-volatility, and reliability make it an ideal choice for mission-critical applications and safety-critical applications. Its core consists of an array of static RAM cells, which are connected to two bit lines, the WRITE and READ circuits, and a sense amplifier. When the device is inactive, the EEPROM will continue to store the data, while the SRAM memory cells will retain their stored data when power is removed and restored.

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