71V016SA10PHG8 Allicdata Electronics
Allicdata Part #:

800-1449-2-ND

Manufacturer Part#:

71V016SA10PHG8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 1M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral...
DataSheet: 71V016SA10PHG8 datasheet71V016SA10PHG8 Datasheet/PDF
Quantity: 1500
Stock 1500Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 3.15 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Base Part Number: IDT71V016
Description

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The 71V016SA10PHG8 is a type of static random-access memory (SRAM) that is very fast in comparison to dynamic random-access memory (DRAM). It is used widely in most kinds of modern computing products such as computers, game consoles, and even low-cost consumer products such as TVs and cameras. It can provide superior performance, including low power consumption, low latency, and fast input/output.

The 71V016SA10PHG8 is a very complex and versatile device. It is built with 16M cells that are organized into 8 million bytes. Each cell holds one bit of data, which enables it to store 8 million bytes of information.

The 71V016SA10PHG8 has two types of cells: static and dynamic. The static cells are used for storing data and are non-volatile, meaning that they are not affected by power outages or power fluctuations. Dynamic cells are used for writing and erasing data and are volatile, meaning that they require the regular application of power in order to maintain their data.

The 71V016SA10PHG8 is designed so that its access times are fast and predictable, which allows it to work well in applications that require quick responses. Its data transfer rates are also very high, making it suitable for processing large amounts of data. It is also power-efficient compared to other types of memory.

The 71V016SA10PHG8 is often used in applications where high speed and performance are essential. This includes networking applications, military applications, and those that require multiple concurrent tasks. It is also commonly used as main memory in computers, and as cache memory in graphics processors for faster rendering.

The 71V016SA10PHG8 consists of memory cells that are organized into rows and columns and are connected to address and control lines. When an address is selected, a row is activated and set to the desired state. The control lines can configure the memory cells to act as read, write, or erase operations.

To access the memory cells, the user must specify the memory address and the control lines. Once this has been done, the control lines are activated to carry out the necessary operations such as read, write, and erase. When data needs to be written, the user must set the address lines, activate the write control line and program the desired data, while the appropriate enable lines must be enabled in order to access the memory cells.

The 71V016SA10PHG8 is an excellent choice for applications requiring high-speed and low-power consumption. Its fast access and operation times make it ideal for applications such as networking and military applications, as well as for general-purpose computing. Furthermore, its low power consumption and low latency make it suitable for portable devices such as laptops and smartphones.

The specific data is subject to PDF, and the above content is for reference

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