71V016SA20YGI8 Allicdata Electronics
Allicdata Part #:

71V016SA20YGI8-ND

Manufacturer Part#:

71V016SA20YGI8

Price: $ 2.09
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 1M PARALLEL 44SOJ
More Detail: SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral...
DataSheet: 71V016SA20YGI8 datasheet71V016SA20YGI8 Datasheet/PDF
Quantity: 1000
500 +: $ 1.89849
Stock 1000Can Ship Immediately
$ 2.09
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ
Base Part Number: IDT71V016
Description

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71V016SA20YGI8 is a type of memory that is used in specific applications and is designed to store data for a specific purpose. The 71V016SA20YGI8 memory is a 16 Megabit CMOS Static RAM (SRAM), Word Mode, contained in a Plastic Chip Carrier (PCC) package. This type of memory is often used in industrial and consumer electronics, automotive, and communication applications.

This type of memory is a non-volatile memory which means that it won’t lose its stored data when power is removed. This is important in applications that require long-term storage of data, such as security systems, medical equipment and remote control devices that are often used outdoors.

The 71V016SA20YGI8 is a single-chip CMOS Static RAM, operated in asynchronous Word Mode. In other words, it is able to access data with wait states (delays) between read and write operations. This ensures that data is processed in the order it was received and is not corrupted by overlapping processes.

The 71V016SA20YGI8 is designed to be read from and written to 16 times faster than a conventional Static RAM. It is designed to operate over a wide temperature range from 0°C to 70°C and is designed with a low-power consumption to reduce power consumption in wearables, such as smart watches and eyewear.

The 71V016SA20YGI8 memory has 16 Megabits of storage space, which is enough for many industrial, consumer, automotive, and communication applications. This type of memory is often used in embedded systems with simple interface requirements and is suitable for a variety of applications where long-term data storage and fast retrieval are necessary.

The 71V016SA20YGI8 works on the principle of refresh cycles. A refresh cycle is a process whereby stored data is replicated on to another memory cell or location to ensure that data is not lost due to charges on the previous memory cell fading with time. This process occurs in small intervals and is necessary to ensure that data is stored and read reliably and accurately.

In order for the 71V016SA20YGI8 to properly save and retrieve data, it is necessary for the appropriate power supply to be applied to it. This type of memory has a write enable line (WE) which is used to activate the write operation. The read enable line (RE) is used to activate the read operation.

71V016SA20YGI8 memory is designed to be used in a wide range of applications, from industrial and consumer electronics, to automotive and communication. It has the capability to store large amounts of data and is able to process data quickly with minimal power consumption. Its non-volatile nature helps to ensure that data is not lost in the event of power being removed, making it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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