71V016SA20BFG Allicdata Electronics
Allicdata Part #:

71V016SA20BFG-ND

Manufacturer Part#:

71V016SA20BFG

Price: $ 2.37
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 1M PARALLEL 48FBGA
More Detail: SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral...
DataSheet: 71V016SA20BFG datasheet71V016SA20BFG Datasheet/PDF
Quantity: 1000
476 +: $ 2.16184
Stock 1000Can Ship Immediately
$ 2.37
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-LFBGA
Supplier Device Package: 48-FBGA (7x7)
Base Part Number: IDT71V016
Description

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71V016SA20BFG is an innovative type of memory device which has a wide range of applications in various industries. This particular type of device is an SRAM-based memory chip which is designed for power/data optimization and is available in a wide range of sizes and configurations. The device is effective in providing fast data access and a reliable, low power source of memory for a variety of applications and platforms.

The primary application of 71V016SA20BFG is the storage of data in servers, workstations, laptops, gaming systems and many other related products. The device features a unique design, utilizing multiple banks of SRAM which are configured to provide fast access to data and a reliable and long lasting storage medium. It is ideal for applications where high performance, low power consumption and reliability are essential.

The working principle of 71V016SA20BFG is based on the concept of interleaving multiple banks of SRAM. The device employs a concept of virtual addresses, in which multiple banks of SRAM can be combined to form a single virtual bank which can be accessed by a single address. This concept allows for fast access to data and a reliable storage medium. The device also utilizes a technique called Asynchronous SRAM (ASRAM) technology in order to minimize power consumption and reduce the impact on system performance.

Another interesting feature of 71V016SA20BFG is the ability to “bundle” multiple banks of SRAM together in a single address. This feature is useful for applications which require the storage of a large amount of data, such as video streaming, for example. This bundling technique reduces the amount of time required to access data and makes it more efficient for data storage in such applications.

71V016SA20BFG is also well-suited for communication systems and networks. The device provides a fast, reliable, low-power memory system to store data, which is essential for communication systems and networks. The device is compatible with a variety of communication interfaces, such as UART, SPI and Ethernet, and also supports audio, video and graphics.

In conclusion, the 71V016SA20BFG is a powerful, yet compact memory device which is ideal for a wide range of applications. Its unique design utilises a combination of Multiple Banks of SRAM and Virtual Address concepts to provide users with an efficient and reliable storage medium for a variety of applications. Furthermore, its low power consumption and fast access to data make it an ideal choice for communication systems and networks. As such, the 71V016SA20BFG is a well rounded device which is suitable for many different types of applications.

The specific data is subject to PDF, and the above content is for reference

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