71V2546S100BG Allicdata Electronics
Allicdata Part #:

71V2546S100BG-ND

Manufacturer Part#:

71V2546S100BG

Price: $ 3.50
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4.5M PARALLEL 119PBGA
More Detail: SRAM - Synchronous ZBT Memory IC 4.5Mb (128K x 36)...
DataSheet: 71V2546S100BG datasheet71V2546S100BG Datasheet/PDF
Quantity: 1000
168 +: $ 3.17839
Stock 1000Can Ship Immediately
$ 3.5
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT71V2546
Supplier Device Package: 119-PBGA (14x22)
Package / Case: 119-BGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135 V ~ 3.465 V
Memory Interface: Parallel
Access Time: 5ns
Series: --
Clock Frequency: 100MHz
Memory Size: 4.5Mb (128K x 36)
Technology: SRAM - Synchronous ZBT
Memory Format: SRAM
Memory Type: Volatile
Part Status: Active
Packaging: Tray 
Description

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71V2546S100BG memory is a type of integrated circuit (IC) memory used for both static and dynamic random access memory (DRAM) applications. 71V2546S100BG memory is a type of DRAM that is used for the storage of digital data in computer memories. The main advantage of 71V2546S100BG memory is its much greater capacity than any other type of semiconductor memory. This high-capacity memory has enabled the development of more powerful computers and other electronic devices.

71V2546S100BG memory is composed of columns and rows of memory cells, each containing a single bit of data. Each cell acts as an analog switch that can be controlled by an electronic control gate. At each gate location, the gate will be switched between an open and closed state depending on what type of memory operation is required. Each cell is made up of two components: an access transistor (AT) and a capacitor. The AT is a type of switch device that is used to control the read and write operations on the memory cell. When the gate is closed, a path is created between the capacitor and the AT, which allows the passage of electrical charge within the cell. When the gate is open, no charge can flow and the cell will always store a ’0’ value.

The 71V2546S100BG memory also uses a unique circuitry design to read and write information to the memory cells. The design employs a complicating way to ensure that data can be written and read from the memory cells in the same order they were written in. This design also helps to achieve a fast data transfer rate between the computer and the memory. The primary benefit of this design is that it allows the computer to access data consistently and quickly without having to constantly reset the memory.

71V2546S100BG memory is most commonly used in high-end computing applications and is used in applications such as servers, desktop computers, laptops, and gaming consoles. 71V2546S100BG memory is also popular in medical and industrial applications where high-speed data transfers and large amounts of data storage are required. Most 71V2546S100BG memory chips have high error correction capabilities, which increases the memory’s reliability and ensures data integrity in cases of power outages or system faults.

71V2546S100BG memory is a high-capacity and high-speed memory design that makes it ideal for many applications. It provides the capability to store and process large amounts of data quickly and reliably, making it a popular choice for high-performance applications. Additionally, 71V2546S100BG memory has a wide range of uses in applications such as servers, desktops, laptops, gaming consoles, and medical and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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