71V25761S183BG8 Allicdata Electronics
Allicdata Part #:

71V25761S183BG8-ND

Manufacturer Part#:

71V25761S183BG8

Price: $ 4.17
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4.5M PARALLEL 119PBGA
More Detail: SRAM - Synchronous Memory IC 4.5Mb (128K x 36) Par...
DataSheet: 71V25761S183BG8 datasheet71V25761S183BG8 Datasheet/PDF
Quantity: 1000
1000 +: $ 3.79536
Stock 1000Can Ship Immediately
$ 4.17
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT71V25761
Supplier Device Package: 119-PBGA (14x22)
Package / Case: 119-BGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135 V ~ 3.465 V
Memory Interface: Parallel
Access Time: 3.3ns
Series: --
Clock Frequency: 183MHz
Memory Size: 4.5Mb (128K x 36)
Technology: SRAM - Synchronous
Memory Format: SRAM
Memory Type: Volatile
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Memory: 71V25761S183BG8 Application Field and Working Principle

The most advanced type of memory integrated circuit currently on the market is the 71V25761S183BG8. It is used to manage and store raw data, such as high-resolution images, text, numbers and documents, and is an integral part of many consumer electronic products. This article describes the application field and working principle of the 71V25761S183BG8.

Application field

The 71V25761S183BG8 is an advanced type of non-volatile memory that is integrated in consumer electronic applications, including the most modern mobile phones, tablets, laptops and digital cameras. The main advantage of this type of memory is its large storage capacity, up to 4GB, which means that it can store much more data than its competitors. Additionally, it is a non-volatile memory, meaning that the data stored in it will not be lost even when the power is turned off.

The 71V25761S183BG8 is also a low-voltage memory, meaning that it uses much less power than other types of non-volatile memory. This low power consumption is especially important in mobile devices, as it helps to preserve battery life. Furthermore, this memory is able to withstand temperatures ranging from -55°C to 125°C, making it suitable for use in extreme environments.

Working principle

The 71V25761S183BG8 utilizes a novel technique for storing data, called charge trapping. In charge trapping, the memory cell is comprised of a transistor, two layers of silicon dioxide, and a special layer of polysilicon. When the transistor is turned on, it charges up the polysilicon layer, creating a stored electric field. This trapped electric field is then used to store data, and the data bits are stored in the polarities of the electric fields.

When the cell is read, the controller sends in a current to charge up the polysilicon layer and measure the stored electric field. Depending on the direction of the current, the device will interpret it as a 1 or 0. This data is then relayed to the controller and stored in the memory.

The 71V25761S183BG8 is also capable of performing fast and accurate programming and erasing. This makes it particularly suitable for use in volatile applications, such as gaming consoles, as it is able to quickly store and read data. Additionally, it has a wide operating voltage range, from 1V to 8V, making it suitable for use in low-power and low-voltage applications.

Conclusion

The 71V25761S183BG8 is an advanced type of non-volatile memory and is the most advanced memory IC currently on the market. It is highly reliable, has a wide operating voltage range, and is suitable for a variety of applications. Furthermore, it utilizes a unique charge trapping technique for storing data and is also capable of performing fast and accurate programming and erasing.

The specific data is subject to PDF, and the above content is for reference

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