71V25761S166BGI

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Typical memory products range from volatile to non-volatile and flash memory to provide storage capacity for various types of applications. 71V25761S166BGI is a type of Non-Volatile Dual Boot Flash Memory, developed by ON Semiconductor (formerly Motorola). 71V25761S166BGI is a unique device that integrates both Freescale, which is the on board independently bootable flash memory and ON Semiconductor’s Power ON Reset (POR) circuits, making the product highly suitable for several applications.

71V25761S166BGI Application Field

71V25761S166BGI is a non-volatile dual boot flash memory suitable as a boot loader or system code storage device in embedded applications. It is a shallow trench isolation (STI) process type memory device, that is suitable for use in diverse applications that require redundancy with long life cycle and reliable data retention. It is ideally applicable for use in medical implants, industrial control systems, aerospace and automotive industry, and military and avionics systems.

71V25761S166BGI includes a Freescale Single Level Cell Flash Memory and a standard reset voltage detect circuit. The flash memory has many features, including both discrete and host controller level interface, 12V write protection, and two integrated program/erase voltage generators. The reset voltage detect circuit comprises of a regulator, timeout circuit, reset generator, and protection circuitry. The device also has an additional hardware write protect signal that enables users to disable the write protection.

71V25761S166BGI Working Principle

71V25761S166BGI is a sixteen megabyte flash memory, with two independent 16-bit wide data buses that are switchable between a host interface mode and a discrete interface mode. It has a positive write protect signal that can be used to disable the write protect state. The device is composed of two independent subsystems, the Freescale Flash Memory and the Reset Voltage Detect circuit.

The Flash Memory Subsystem contains 16 Mbits of single level cell (SLC) memory. It is arranged in 512 blocks, each consisting of 64K×16 bits. The flash memory can be programmed and erased in sector or block units. It operates at 3.3V supply voltage, and it supports both host and discrete programming modes. Write protect is implemented on the device by either an internal command or an RC signal.

The Reset Voltage Detect circuit consists of a regulator, timeout circuit, reset generator, and protection circuitry. The low voltage sense (LVS) will detect if the system voltage is below a specific voltage. If the voltage is detected as low, it will activate the reset generator, which will generate a reset signal for the system. The protection circuitry is used for the detection of an over-voltage condition, and the reset generator will re-activate the system after the over-voltage situation has been removed.

The Reset Voltage Detect circuit is powered from the host system, and it is also possible to power it from an external battery. When the host system or the external battery is removed, the Reset Voltage Detect circuit will detect that and produce a reset pulse. The pulse is used to activate the Freescale Flash Memory. The Freescale Flash Memory is then used to run the system. This allows the system to recover from the transient errors caused by the removal of power.

71V25761S166BGI is a versatile memory device with a wide range of applications. It can be used as a boot loader or system code storage device in applications that require redundant and reliable data storage. Additionally, the integrated reset voltage detect circuit makes it ideal for use in embedded systems and industrial control systems.

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