71V25761S200BG8 Allicdata Electronics
Allicdata Part #:

71V25761S200BG8-ND

Manufacturer Part#:

71V25761S200BG8

Price: $ 5.65
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4.5M PARALLEL 119PBGA
More Detail: SRAM - Synchronous Memory IC 4.5Mb (128K x 36) Par...
DataSheet: 71V25761S200BG8 datasheet71V25761S200BG8 Datasheet/PDF
Quantity: 1000
1000 +: $ 5.13638
Stock 1000Can Ship Immediately
$ 5.65
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT71V25761
Supplier Device Package: 119-PBGA (14x22)
Package / Case: 119-BGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135 V ~ 3.465 V
Memory Interface: Parallel
Access Time: 3.1ns
Series: --
Clock Frequency: 200MHz
Memory Size: 4.5Mb (128K x 36)
Technology: SRAM - Synchronous
Memory Format: SRAM
Memory Type: Volatile
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Memory

One of the most important components in a computer system is memory. Memory consists of electronic components with integrated circuits called semiconductor memory chips. One of the most common types of memory is the 71V25761S200BG8, a dynamic random access memory (DRAM). The purpose of this article is to explain the application field and working principle of the 71V25761S200BG8.

The 71V25761S200BG8 is a 64Mb DRAM with large density and ideal architecture, making it suitable for use in multiple application fields. It is mainly used in data storage, video memory, remote storage systems, GPU memory, and computing systems. For example, it can be used to store large amounts of data in data storage systems, as well as in computer networks, to increase the speed and stability of data processing. It is also used in gaming devices, such as video game consoles, as the main type of video memory. In addition, it is used in embedded systems, which require a large amount of memory and fast access speed.

The 71V25761S200BG8 is composed of an array of memory cells, each made up of a capacitor and a transistor. A capacitor stores electrons and a transistor serves as a switch that can close or open a connection to the capacitor. The two together form a “cell”, a single unit of memory. This memory chip contains 64Mb of memory, divided into 8 8Mb blocks of memory (8192 words by 64 bits).

The 71V25761S200BG8 has two primary operating modes: single and dual port modes. In single port mode, the memory chip has a single port to read and write data from and to the memory cells. In dual port mode, the chip has two ports, allowing simultaneous read and write access from and to the memory cells. The chip also supports page mode, allowing consecutive accesses to the same memory page, resulting in faster overall access times.

The 71V25761S200BG8 is capable of high-speed memory access, with a maximum access time of 20 nanoseconds. It is also power efficient, with a low operating voltage of 1.8V and a standby current of less than 10uA. This makes it ideal for applications that require a large amount of memory and fast access speed in a cost-effective package.

In conclusion, the 71V25761S200BG8 is a 64Mb DRAM with large density and ideal architecture, making it suitable for use in multiple application fields. It has two primary operating modes, single and dual port, as well as page mode, allowing for fast and efficient access and retrieval of data from memory cells. Furthermore, it is power efficient, making it ideal for cost-sensitive applications.

The specific data is subject to PDF, and the above content is for reference

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