71V65603S150BGGI Allicdata Electronics

71V65603S150BGGI Integrated Circuits (ICs)

Allicdata Part #:

71V65603S150BGGI-ND

Manufacturer Part#:

71V65603S150BGGI

Price: $ 13.52
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 9M PARALLEL 119PBGA
More Detail: SRAM - Synchronous ZBT Memory IC 9Mb (256K x 36) P...
DataSheet: 71V65603S150BGGI datasheet71V65603S150BGGI Datasheet/PDF
Quantity: 1000
84 +: $ 12.28850
Stock 1000Can Ship Immediately
$ 13.52
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT71V65603
Supplier Device Package: 119-PBGA (14x22)
Package / Case: 119-BGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135 V ~ 3.465 V
Memory Interface: Parallel
Access Time: 3.8ns
Series: --
Clock Frequency: 150MHz
Memory Size: 9Mb (256K x 36)
Technology: SRAM - Synchronous ZBT
Memory Format: SRAM
Memory Type: Volatile
Part Status: Active
Packaging: Tray 
Description

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Memory devices are one of the most common ways of storing data in electronics today. The 71V65603S150BGGI device is a memory component from the family of SMS Memory. It is a very versatile device, offering a wide variety of applications, making it a popular choice for many engineers and designers.In general, the 71V65603S150BGGI is a type of dynamic random-access memory (DRAM) component. It is a low-voltage memory device with a relatively high bandwidth. This makes the 71V65603S150BGGI a great choice for applications where a fast reading and writing speed is essential. The 71V65603S150BGGI has a typical access time of 15ns and a data transfer rate of 150Mb/s. This makes it well-suited for operations that require fast data retrieval and storage.The 71V65603S150BGGI is intended for use in embedded systems, such as industrial controllers, automated test equipment, and multi-processor systems. It is also suitable for consumer products such as computers, tablets, and smartphones. The low voltage requirements of the 71V65603S150BGGI make it an ideal choice for systems that need to conserve power, such as cellphones and other consumer electronics.The working principle of the 71V65603S150BGGI is simple yet effective. It uses a transistor-based memory cell, which stores a single bit of data. The memory cell stores the data as a charge, and the charge is discharge from the cell to read the data that is stored. This is done by sending a voltage into the cell, which causes the charge to leak out of the cell, creating a current that is then detected and read.The 71V65603S150BGGI is a great choice for many types of applications, from consumer electronics to embedded systems. Its versatile design and low power requirements make it an ideal option for those who seek a reliable and efficient memory component. With its fast read and write speeds and its low voltage requirements, the 71V65603S150BGGI is sure to be a popular choice for many of today\'s designers and engineers.

The specific data is subject to PDF, and the above content is for reference

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