71V65903S80BQ Allicdata Electronics
Allicdata Part #:

71V65903S80BQ-ND

Manufacturer Part#:

71V65903S80BQ

Price: $ 10.86
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 9M PARALLEL 165CABGA
More Detail: SRAM - Synchronous ZBT Memory IC 9Mb (512K x 18) P...
DataSheet: 71V65903S80BQ datasheet71V65903S80BQ Datasheet/PDF
Quantity: 1000
136 +: $ 9.87028
Stock 1000Can Ship Immediately
$ 10.86
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 9Mb (512K x 18)
Write Cycle Time - Word, Page: --
Access Time: 8ns
Memory Interface: Parallel
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)
Base Part Number: IDT71V65903
Description

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Memory technology has advanced significantly over the past few decades, and the 71V65903S80BQ solution has emerged as one of the most versatile memory solutions available. This article will provide an overview of the 71V65903S80BQ application field and working principle.

The 71V65903S80BQ solution is a Hybrid Memories solution. It combines Flash memory and dynamic random access memory (DRAM) to provide both high speed and high capacity memory with fast access times. The 71V65903S80BQ solution uses a 16-bit wide bus and is capable of transferring 8 bits of data at a time. This enables it to achieve speeds up to 533 megabytes per second (MBps), making it one of the fastest memory solutions on the market.

The 71V65903S80BQ solution can be used in a wide range of applications, from embedded and industrial memory solutions to automotive applications. It is particularly well-suited for applications that require high speed and high capacity while maintaining a low power consumption profile. In addition, the solution has a very wide operating temperature range, making it suitable for a variety of environmental conditions.

The 71V65903S80BQ solution uses a hybrid architecture, which provides a number of advantages over other memory technologies. For example, the hybrid architecture allows the two types of memory (Flash and DRAM) to be managed separately, allowing the memory to be used more efficiently. The hybrid architecture also reduces power consumption and improves overall performance.

The 71V65903S80BQ solution also includes an on-chip ECC (Error Correction Code) to detect and correct any data errors that may occur during transmission. This ensures that the data being transmitted is accurate and reliable.

The 71V65903S80BQ solution incorporates an on-board voltage regulator, allowing it to operate at both 3.3 V and 5 V. This feature allows the memory solution to be used in a variety of applications and environments, ranging from embedded to automotive.

In addition to its hybrid architecture and on-chip ECC, the 71V65903S80BQ solution also includes an advanced signal processing unit (ASP) which can be used to ensure signal integrity and provide improved reliability. The ASP provides improved data signal amplification and signal conditioning to ensure that data is being received at its optimum level.

The 71V65903S80BQ solution is a versatile and reliable memory solution that is suitable for a wide range of applications. It offers high speed and capacity with a low power profile, and is suitable for both embedded and automotive applications. The solution also includes on-chip error correction, signal processing, and voltage regulation, allowing it to operate across a wide range of environmental conditions.

The specific data is subject to PDF, and the above content is for reference

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