71V67703S75BG Allicdata Electronics
Allicdata Part #:

71V67703S75BG-ND

Manufacturer Part#:

71V67703S75BG

Price: $ 12.38
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 9M PARALLEL 119PBGA
More Detail: SRAM - Synchronous Memory IC 9Mb (256K x 36) Paral...
DataSheet: 71V67703S75BG datasheet71V67703S75BG Datasheet/PDF
Quantity: 1000
84 +: $ 11.24270
Stock 1000Can Ship Immediately
$ 12.38
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT71V67703
Supplier Device Package: 119-PBGA (14x22)
Package / Case: 119-BGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135 V ~ 3.465 V
Memory Interface: Parallel
Access Time: 7.5ns
Series: --
Clock Frequency: 117MHz
Memory Size: 9Mb (256K x 36)
Technology: SRAM - Synchronous
Memory Format: SRAM
Memory Type: Volatile
Part Status: Active
Packaging: Tray 
Description

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Memory: 71V67703S75BG Application Field and Working Principle

Memory is an indispensable component in any electronic device. For example, a computer must have some form of memory in order to work properly and to retain user data. The 71V67703S75BG is an example of a Memory device that is designed to meet the data retention requirements of today\'s high-tech products.

Application Field

The 75BG is an 8-bit integrated CMOS EEPROM, which is especially suitable for applications in automotive, industrial, consumer and other sectors. Some examples include automobiles, handheld devices, home appliances, security systems and other smart home devices.

This device allows data to be written and read at a high speed of 1.2ms and 2.2ms, respectively. It provides a low-power consumption and is highly reliable, and it offers two separate bytes for unlimited block write operations. Through this device, users can easily configure and update their systems, reducing the amount of time spent on maintenance.

Working Principle

The 75BG is a storage device that uses a charge storage technique to store data. It uses cells to store individual bits with the help of a floating gate between the cells. The cells allow the charge to be transferred from the control gate to the floating gate, thus allowing the data to be written into the device.

Once the data is written, it is retained in the cell until it is intentionally erased. Erasure is performed by removing the charge from the cells and allowing the bits to be re-written with different data. The device also provides protection against data corruption caused by electrical interference, heat or radiation by using error correction and parity checks.

Conclusion

The 71V67703S75BG is a highly reliable storage device that can be used in a variety of applications. It has a low-power consumption, is highly reliable, and offers high-speed data write/read operations. With its two separate bytes, users can easily configure and update their systems. The charge storage technique used by this device allows data to be safely stored and protected from electrical interference, heat, or radiation.

The specific data is subject to PDF, and the above content is for reference

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