71V65803S133BGG8 Allicdata Electronics
Allicdata Part #:

71V65803S133BGG8-ND

Manufacturer Part#:

71V65803S133BGG8

Price: $ 9.72
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 9M PARALLEL 119PBGA
More Detail: SRAM - Synchronous ZBT Memory IC 9Mb (512K x 18) P...
DataSheet: 71V65803S133BGG8 datasheet71V65803S133BGG8 Datasheet/PDF
Quantity: 1000
1000 +: $ 8.83204
Stock 1000Can Ship Immediately
$ 9.72
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT71V65803
Supplier Device Package: 119-PBGA (14x22)
Package / Case: 119-BGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135 V ~ 3.465 V
Memory Interface: Parallel
Access Time: 4.2ns
Series: --
Clock Frequency: 133MHz
Memory Size: 9Mb (512K x 18)
Technology: SRAM - Synchronous ZBT
Memory Format: SRAM
Memory Type: Volatile
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Memory technology is an important branch in electronic technology. 71V65803S133BGG8 is a type of memory device which is widely applied for its special characteristics. This article will introduce its application field and the working principle.

Application field of 71V65803S133BGG8

71V65803S133BGG8, as a series of semiconductor-based memory device, is able to store data in the form of electricity or light. It is mainly applied in industrial control field, automation instrumentation and data acquisition, such as engine control, automatic capacitor regulation system, flowmeter, intelligent terminal and so on. Besides, it can be used in embedded systems, such as single chip with real time operating system, FPGA or SoC.

Working Principle

71V65803S133BGG8 is a special type of non-volatile memory, which works through an electrical current to save data. This kind of memory device employs semiconductors, metal oxide and other materials as the storage substrate. When an electric current is applied, the data will be stored in the form of electrons. This data can last up to 10-15 years and will not be lost due to power outage.

71V65803S133BGG8 mainly consists of a silicon-on-insulator (SOI) substrate or gallium arsenide (GaAs). Its resistance values and voltage values determine the storing data state. For example, in the low resistance which is stable between two nodes, it stands for 0. In the high-resistant state, it stands for 1. When accessing the memory cell, if the two voltage values are not equal, the value will be changed due to the reaction of circuits.

In conclusion, 71V65803S133BGG8 is a type of non-volatile memory device which utilizes a current to store data. It is mainly adopted for industrial control, data acquisition and embedded systems. Its working principle is based on the changes of resistance values and voltage values.

The specific data is subject to PDF, and the above content is for reference

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