71V65803S150BQ Allicdata Electronics
Allicdata Part #:

71V65803S150BQ-ND

Manufacturer Part#:

71V65803S150BQ

Price: $ 10.86
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 9M PARALLEL 165CABGA
More Detail: SRAM - Synchronous ZBT Memory IC 9Mb (512K x 18) P...
DataSheet: 71V65803S150BQ datasheet71V65803S150BQ Datasheet/PDF
Quantity: 1000
136 +: $ 9.87028
Stock 1000Can Ship Immediately
$ 10.86
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT71V65803
Supplier Device Package: 165-CABGA (13x15)
Package / Case: 165-TBGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135 V ~ 3.465 V
Memory Interface: Parallel
Access Time: 3.8ns
Series: --
Clock Frequency: 150MHz
Memory Size: 9Mb (512K x 18)
Technology: SRAM - Synchronous ZBT
Memory Format: SRAM
Memory Type: Volatile
Part Status: Active
Packaging: Tray 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory forms the base of computing, and the type and quality of memory technology used in the device determines its performance. The 71V65803S150BQ is one such memory device used in a wide variety of computing applications. This article will discuss the application field and working principle of the 71V65803S150BQ.

Background

The 71V65803S150BQ is a type of dynamic random-access memory (DRAM) that combines high performance, low power consumption, and high density in a single device. Developed by Fujitsu, the 71V65803S150BQ offers unprecedented levels of reliability and performance, making it an attractive choice for a wide range of applications.

Application fields

The 71V65803S15BQ can be used in a variety of applications, including:

  • personal computers, servers, and other computing devices
  • networking applications
  • portable and mobile applications
  • digital recording and broadcast applications
  • industrial automation and digital control systems
  • security systems

The device also offers low power consumption and is ideal for low-power and power-sensitive applications.

Working Principle

The 71V65803S150BQ uses DRAM technology to provide fast access to data and reliable performance. Working like other DRAM chips, the 71V65803S150BQ stores data in a network of memory cells, each of which has a drain transistor and a capacitor. The memory cell is then connected to a word line and two bit lines, which are used to charge and discharge the capacitor.

When data is written to the memory cell, a voltage is applied to the word line, causing the drain transistor to open. This applies a charge to the capacitor, which then stores the data. When data is read from the memory cell, the charge is removed from the capacitor and sent to the bit lines, which can then be read and interpreted.

Conclusion

The 71V65803S150BQ is a powerful, low-power-consumption memory device that is suitable for a wide range of applications. With its reliable performance and ability to store data quickly and reliably, this device is a great choice for accessing large amounts of data quickly and efficiently.

The specific data is subject to PDF, and the above content is for reference

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