71V67602S150PFGI Allicdata Electronics
Allicdata Part #:

71V67602S150PFGI-ND

Manufacturer Part#:

71V67602S150PFGI

Price: $ 11.21
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 9M PARALLEL 100TQFP
More Detail: SRAM - Synchronous Memory IC 9Mb (256K x 36) Paral...
DataSheet: 71V67602S150PFGI datasheet71V67602S150PFGI Datasheet/PDF
Quantity: 1000
144 +: $ 10.19160
Stock 1000Can Ship Immediately
$ 11.21
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT71V67602
Supplier Device Package: 100-TQFP (14x14)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135 V ~ 3.465 V
Memory Interface: Parallel
Access Time: 3.8ns
Series: --
Clock Frequency: 150MHz
Memory Size: 9Mb (256K x 36)
Technology: SRAM - Synchronous
Memory Format: SRAM
Memory Type: Volatile
Part Status: Active
Packaging: Tray 
Description

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The 71V67602S150PFGI Memory is a type of random access memory that utilizes a nonvolatile memory technology, known as ferroelectric random access memory (FRAM). This technology works by combining ferroelectric and semiconductor materials to form a unique type of nonvolatile memory. It enables data to be stored and retrieved for various times its access time, which is faster than other nonvolatile memory technologies. It also helps to reduce power consumption. The 71V67602S150PFGI Memory has been designed specifically to meet the stringent requirements of certain critical applications such as medical, industrial, embedded, and aerospace.

The 71V67602S150PFGI Memory is typically used in high-reliability, mission-critical applications. It can offer a high level of data integrity, reliability, and scalability, making it well-suited for such applications. The 71V67602S150PFGI Memory utilizes a technology called ferroelectric random access memory (FRAM). It is an advanced memory technology that combines ferroelectric and semiconductor materials to create a non-volatile type of memory. This means that data is stored even if the power is turned off, making it ideal for applications that need to store data over long periods of time.

The working principle of the 71V67602S150PFGI Memory is based on ferroelectric materials and semiconductor materials being used together. This combination enables the memory to store data persistently without the need for external power sources. When a voltage is applied to the exposed contacts of the ferroelectric material, charges are created, allowing the memory to be programmed with data. Reading data can be accomplished by applying a second voltage wave in the opposite direction. Since no power source is required for this type of memory, it is ideal for energy-critical applications where power decreases or reliability is critical.

The 71V67602S150PFGI Memory is perfect for many applications, mostly due to its fast operation and reliable data storage. Its low power consumption and no power source requirement make it suitable for many energy-critical applications. Its nonvolatile memory technology allows it to store data for long periods of time and with high reliability. Its fast yet reliable operation and scalability make it ideal for use in mission-critical and industrial applications. The 71V67602S150PFGI Memory is a great memory solution for many designers who need a reliable and high-performance memory solution.

The specific data is subject to PDF, and the above content is for reference

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