71V67603S150PFGI

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory, as one of the fundamental components inside computers, play a key role in the operation of computers. The 71V67603S150PFGI, which is a form of static random access memory (SRAM) manufactured by Samsung, is an example of one of the more modern memory components used in computers. In this article, we will discuss the application field and working principle of the 71V67603S150PFGI.

Application Field

The 71V67603S150PFGI is designed for application within the field of storage and data systems, such as within computers and networks. It is especially suitable for applications which require large capacity storage, as the Samsung 71V67603S150PFGI has a capacity of 6,000 megabits. This memory module is equipped with a standard 2GB of DRAM, making it a great choice for high performance systems.

The 71V67603S150PFGI also offers significant flexibility, with support for multiple types of memory configurations. It can be configured for low-density DRAM (DDR3L-1600), high-density DRAM (DDR3L-1866), and a hybrid configuration which combines both types of DRAM. Furthermore, this module is compatible with both Windows and LINUX operating systems as well as other specialized enterprise servers.

This module is also optimised to reduce power consumption, making it suitable for application within mobile devices. The 71V67603S150PFGI has a low power consumption of 0.85 Watts per megabit, making it one of the more energy efficient memory modules on the market.

Working Principle

The working principle of the 71V67603S150PFGI is similar to other forms of static random access memory (SRAM). It is based on a pair of cross-coupled inverters and operates on the principle of binary logic. That is, it stores 1s and 0s, which are represented binary bits, in order to store and process data. It stores data on the memory cells in the form of charge, which are held on the cells by an array of transistors.

The 71V67603S150PFGI also offers various data protection features for reliable data storage. These features include auto-refresh, error-correction, and temperature-based command latencies. These features are designed to ensure that data stored in the module is preserved in extreme conditions, such as moments of power loss.

In conclusion, the 71V67603S150PFGI is an example of modern high-performance memory module. It has a large capacity of 6,000 megabits and offers flexibility in terms of its memory configurations. Furthermore, its low power consumption means that it can be used in mobile devices as well as high performance enterprise servers. It is based on the principle of binary logic and offer various data protection features for reliable data storage.

The specific data is subject to PDF, and the above content is for reference