93C86-E/SN Allicdata Electronics
Allicdata Part #:

93C86-E/SN-ND

Manufacturer Part#:

93C86-E/SN

Price: $ 0.62
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC EEPROM 16K SPI 3MHZ 8SOIC
More Detail: EEPROM Memory IC 16Kb (2K x 8, 1K x 16) SPI 3MHz ...
DataSheet: 93C86-E/SN datasheet93C86-E/SN Datasheet/PDF
Quantity: 500
1 +: $ 0.62000
10 +: $ 0.60140
100 +: $ 0.58900
1000 +: $ 0.57660
10000 +: $ 0.55800
Stock 500Can Ship Immediately
$ 0.62
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8, 1K x 16)
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 2ms
Memory Interface: SPI
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: 93C86
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

93C86-E/SN is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) used in a wide variety of applications. Its features include low voltage operation, low power consumption, and low cost. This makes it an ideal choice for many applications that require read/write memory.

Application Field:

  • Consumer electronics products, such as digital cameras and digital video players.
  • Computer and data storage devices, such as hard drives and USB memory sticks.
  • Automotive systems, such as engine control units and airbag modules.
  • Mobile phone components, such as SIM cards and flash memories.
  • Industrial control systems, such as monitoring and control systems.

Working Principle:

  • A 93C86-E/SN chip stores information using non-volatile electrical current. It uses cells, consisting of a floating gate and a field oxide. These cells are arranged in a matrix and can be programmed to store one bit of information per cell.
  • The stored bits are read out of the chip by applying a voltage to the appropriate address. This voltage causes current to flow through the relevant field oxide, allowing the bit stored in the cell to be read.
  • The bits can also be written to the chip. Writing is achieved by applying a voltage to the appropriate address and then applying a programming current to the selected cells.
  • Erasing is done by applying a higher voltage and a larger programming current to the same cells. This will clear the data in the cells, allowing new data to be written.

The 93C86-E/SN is a versatile memory chip that is well suited to a wide range of applications. Its low cost, low power consumption, and low voltage operation make it an ideal choice for embedded applications that require read/write memory.

The specific data is subject to PDF, and the above content is for reference

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