93C86AT-E/MS

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The 93C86AT-E/MS is a 16K non-volatile OTP CMOS EEPROM Memory. The 93C86AT-E/MS memory is classified as a type of volatile memory. The device is specifically designed to provide low-current operation with a significantly longer life than traditional volatile memory. This Memory device is applicable in a wide range of applications, including automotive, industrial, instrumentation and consumer. The 93C86AT-E/MS is an ideal solution for designers who require high-performance memory in small foot print.

93C86AT-E/MS has a wide range of features, such as a total of 16K bits, which are divided into 8K bytes of user data space and 8K words of code space. It also features multiple word size write and erase operations, flexible programming, program write time of 5 ms per byte of data, and fast reads with a minimum cycle time of 25 ns. The memory device also offers a Data Retention of Year at +85°C and built-in self-test ( BIST ) functionality.

The 93C86AT-E/MS works in conjunction with a programming interface, such as a microcontroller or external memory programmer. This device has two main inputs and two main outputs. Inputs are a power input, used to supply power to the device and a data input, used to supply data when programming the device. Outputs include a data output, used to return data when reading the device, and a control output. The control output is used to either conditionally or unconditionally enable or disable the memory device. By having the ability to program the Memory device, this makes it easier for the user to store different types of data.

The 93C86AT-E/MS is designed to operate with a single voltage. This voltage can range from +2.7V to +5.5V. The 93C86AT-E/MS is a fast read and write memory device, thus supporting a wide variety of applications. Depending on the application, the device can either be used to read or write data, or it can be used to store data for future reference. Additionally, the device also has the ability to be programmed multiple times.

The 93C86AT-E/MS Memory is also very reliable as it is based on an advanced CMOS EEPROM technology. This robust and reliable technology ensures that the device can sustain long-term and high-temperature operation without any functional problems. Furthermore, the device has a built-in self-test ( BIST ) feature, allowing the user to test the device for microscopic faults. This feature helps to ensure that the device is operating correctly and that it can serve in the long-term.

In summary, the 93C86AT-E/MS Memory is an ideal choice for applications requiring reliable, low-power, versatile, and long-term memories. The device is available in a variety of packages and is designed to have a long and reliable data retention time. The device also supports multiple word size write and erase operations, and has a built-in self-test ( BIST ) feature. Altogether, the 93C86AT-E/MS is an ideal solution for a variety of memory applications.

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