93LC46A-I/P Allicdata Electronics
Allicdata Part #:

93LC46A-I/P-ND

Manufacturer Part#:

93LC46A-I/P

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC EEPROM 1K SPI 2MHZ 8DIP
More Detail: EEPROM Memory IC 1Kb (128 x 8) SPI 2MHz 8-PDIP
DataSheet: 93LC46A-I/P datasheet93LC46A-I/P Datasheet/PDF
Quantity: 1061
Stock 1061Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 6ms
Memory Interface: SPI
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP
Base Part Number: 93LC46A
Description

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93LC46A-I/P Memory - Application Field and Working Principle

The 93LC46A-I/P is a 2K TRM 2 x 1024 bit EEPROM (Electrically Erasable and Programmable Read-Only Memory) with a high speed serial port. It is a small-capacity non-volatile memory device which provides fast access to data stored within its memory cells. By utilizing the 93LC46A-I/P, developers and engineers can quickly access, store, and modularize data in a convenient and reliable manner.

Application Field

The 93LC46A-I/P is an ideal memory device choice for industrial automation and control systems. Its non-volatile memory cells allow the EEPROM to retain data even in the event of a power failure. By using 93LC46A-I/P, engineers and developers can create reliable industrial control systems, charging systems, and safety systems. The 93LC46A-I/P is also ideal for medical devices, robotics systems, electronic toys, automotive sensors, and other electronic devices that require low-cost, reliable memory storage.

Working Principle

The 93LC46A-I/P EEPROM works on the basis of the junction gate field effect transistor (JFET) technology. The JFET is a semiconductor device with two p-n junctions connected in series. The JFET stores data in its two p-n junctions. When a positive gate voltage (Vg) is applied to the JFET, the stored charge on the gate creates a channel between the source and drain. Thus, the current through the channel increases and the stored charges on the gate become more negative.

For writing data, a special write/erase logic circuit generates read/write/erase cycles and sends the information to the JFET via the gate. The write/erase logic circuit also handles the alteration of the stored charges on the gate and keeps the data in the JFET unchanged. When writing data, the logic circuit converts a digital 1 or 0 into a voltage that is applied to the gate. The write/erase logic circuit then moderates the amount of charge on the gate which causes the JFET to store the data in its two p-n junctions.

For reading data, the read/write/erase logic circuit then reads the data stored in the JFET by sensing the current through the channel between the source and drain. When the data is read, the logic circuit then sends the information to the EEPROM\'s serial port which can then be read by other electronic devices.

The specific data is subject to PDF, and the above content is for reference

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