93LC46CT-I/MNY

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

93LC46CT-I/MNY Memory

93LC46CT-I/MNY is a 4K-bit serial Electrically Erasable Programmable Memory (EEPROM) designed to meet the needs of memory storage applications. This device uses the latest CMOS technology for low power consumption and a diminished pin count for increased reliability. The 93LC46CT-I/MNY has a 64-byte page-write buffer that allows up to 64 bytes of data to be written at a time. To facilitate the programming of multiple devices, the 93LC46CT-I/MNY can be operated in an Electro-Static-Discharge (ESD) protected mode.

Application fields of 93LC46CT-I/MNY

The 93LC46CT-I/MNY is ideal for any memory storage and recall application. This device is well suited for applications such as remote controllers, gaming consoles and cellular phones. The 93LC46CT-I/MNY can be used in industrial applications such as data logging, automotive, factory automation and machine control. In addition, the 93LC46CT-I/MNY can be used in embedded systems.

Working principle of 93LC46CT-I/MNY

The 93LC46CT-I/MNY is an EEPROM with an address space of 4Kbits, consisting of eight 4Kbit segments. Data is programmed and erased from the device by applying a voltage to the appropriate control pin and the data input pin. Data is read from the 93LC46CT-I/MNY by applying a voltage to the control pin and the data output pin. A 64-byte page-write buffer allows up to 64 bytes of data to be written at a time.

The 93LC46CT-I/MNY provides three different memory write operations: Page-write, Sequential-write and Overwrite. For Page-write operation, up to 64 bytes of data can be written at a time. After the write, a verify operation and the write-inhibit mode is enabled, preventing additional writes to the memory. For Sequential-write, up to 192 bytes of data can be written at a time. An overwrite operation is also available for the 93LC46CT-I/MNY. This operation allows for data to be written over existing data without erasing the memory first.

The 93LC46CT-I/MNY also incorporates a number of safety features to protect the device and its contents from accidental damage. These features include a Voltage Spike Detection circuit which monitors the supply and protects the device from sudden voltage changes. The 93LC46CT-I/MNY also includes an ESD protection circuit which prevents electrostatic discharge damage.

Conclusion

The 93LC46CT-I/MNY is an ideal solution for applications that require reliable memory storage and recall. This device offers a number of features such as a 64-byte page-write buffer and three different write operations, allowing for greater flexibility in memory operations. The 93LC46CT-I/MNY also offers safety features such as a Voltage Spike Detection circuit and ESD protection, ensuring the device and its contents are protected from accidental damage.

The specific data is subject to PDF, and the above content is for reference