A5KP120A-G Circuit Protection

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TVS (Transient Voltage Suppressor) diodes, also known as surge suppressors, are designed to protect sensitive electronic components from damage due to voltage transients. The A5KP120A-G is a low-clamping voltage TVS Diode that is designed to be used in automotive applications. It is designed to absorb voltage transient surges and protect the device that it is placed on.

The A5KP120A-G is a low-clamping voltage TVS diode with a minimum breakdown voltage of 6.2V and a maximum clamping voltage of 11.5V at an 8/20 μs surge test. The diode has an operating temperature range of -40°C to 150°C, making it suitable for use in automotive applications. The device also has a surge capability of 600W peak power in an 8/20 μs waveform, providing excellent protection for automotive applications.

The A5KP120A-G has a small profile and a low profile, making it an ideal choice for automotive applications with limited space. The diode also has a low clamping voltage that helps to protect sensitive electronic components from damage due to voltage transients. The diode is constructed from an advanced Silicon-Germanium (SiGe) process and is designed to provide superior performance and reliability.

The working principle of the A5KP120A-G is based on the PN diode junction structure. When a voltage transient is introduced into the system, the diode acts as a protection circuit by absorbing the surge current and clamping the voltage to a safe level to avoid damage to the sensitive components on the board. The diode absorbs the surge current until the current drops to the holdover current level and then releases the absorbed current to ground.

The A5KP120A-G is an excellent choice for automotive applications that require a low-clamping voltage TVS diode. It is designed to offer superior protection from voltage transients as well as providing efficient power management and improved reliability. The device also has a low profile and a small footprint, allowing it to be used in applications with limited space. The device is constructed from an advanced Silicon-Germanium process which provides excellent performance and reliability.

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