A5KP51A-G Circuit Protection

Voltage - Clamping (Max) @ Ipp:	82.4V
Supplier Device Package:	R-6
Package / Case:	R6, Axial
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Capacitance @ Frequency:	--
Applications:	Automotive
Power Line Protection:	No
Power - Peak Pulse:	5000W (5kW)
Current - Peak Pulse (10/1000µs):	60.68A
Series:	Automotive, AEC-Q101
Voltage - Breakdown (Min):	56.7V
Voltage - Reverse Standoff (Typ):	51V
Unidirectional Channels:	1
Type:	Zener
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Box (TB)

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TVS - DiodesThe A5KP51A-G is an ultra-fast, high power transient voltage suppressor (TVS) diode. It is designed to provide protection for a wide range of electronic equipment from extreme voltage changes and surges. The device is designed to protect against voltage transients which occur due to lightning, electrostatic discharge (ESD), and other high surge voltages.A5KP51A-G is a 5.5 kV rated, dual bidirectional, bidirectional, 600 W peak pulse power device. The device provides excellent avalanche protection and is ideal for automotive, consumer electronics, industrial, telecom, and power electronics applications.The A5KP51A-G has a wide variety of application fields. It can be used for surge protection in automotive and consumer electronic systems. This includes computers, communications systems, and industrial equipment. It is also used in power supplies and systems for protection against lightning strikes.The working principle of A5KP51A-G is a combination of zinc oxide based avalanche breakdown and additional electron-hole recombination. The voltage across the diode rises when electric charge accumulates on the device\'s gate. When the critical breakdown voltage is reached, the TVS diode starts conducting current and dissipates electric power. This prevents the voltage across the diode from exceeding the breakdown voltage, thus providing protection against transients.The A5KP51A-G utilizes a process called "inverse Avalanche," which is a combination of negative-ion conduction and positive carrier injection. Negative ions (e.g. electrons) are emitted from the device’s junction under reverse bias and these electrons recombine with holes in the p-type layer of the diode. This process, called reverse avalanche, carries out the breakdown of the junction and rapidly reduces the voltage across the junction. This helps reduce the voltage stress across the TVS diode, thus ensuring better protection against ESD and other transient voltages.The A5KP51A-G is suitable for applications that require lower current handling capabilities compared to those of earlier versions of TVS diodes. The device also features a low capacitance and an ultra-fast response time. The device has a breakdown voltage of 5.5 kV and a maximum voltage of 8 kV, making it suitable for use in harsh environments.The A5KP51A-G is an excellent choice for a wide variety of applications, including reducing the damaging effects of power and lightning surge transients. Its high-power handling capabilities and low capacitive effects make it an ideal choice for transient voltage suppression and high-power protection. The device is also suitable for use in a variety of other devices, including LCD monitors, computers, telecom systems, industrial systems, and automotive electronics.

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