A6818SEPTR-T Allicdata Electronics
Allicdata Part #:

620-1308-2-ND

Manufacturer Part#:

A6818SEPTR-T

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Allegro MicroSystems, LLC
Short Description: IC SOURCE DVR 32BIT SER 44PLCC
More Detail: N/A
DataSheet: A6818SEPTR-T datasheetA6818SEPTR-T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
Base Part Number: A6818
Supplier Device Package: 44-PLCC (16.59x16.59)
Package / Case: 44-LCC (J-Lead)
Operating Temperature: -20°C ~ 85°C (TA)
Fault Protection: --
Features: --
Input Type: Non-Inverting
Rds On (Typ): --
Current - Output (Max): 40mA
Series: --
Voltage - Load: 60V (Max)
Interface: Strobe, Serial
Output Type: Bipolar
Output Configuration: High Side
Ratio - Input:Output: 1:32
Number of Outputs: 32
Switch Type: Latched Driver
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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A6818SEPTR-T application field and working principle

A6818SEPTR-T is a low on-resistance power distribution switches, load drivers and digital power switch IC, designed to simplify the correct setting of power supply system in low voltage 3V to 5.5V applications.

Ideal applications of A6818SEPTR-T include portable electronic products such as digital cameras and PDAs, personal audio players and smart phones. It is mainly used for power control tasks, providing accurate low on-resistance control in low voltage solutions.

The PMIC A6818SEPTR-T has two Independent N-channel MOSFETs with a low on-resistance of 0.2Ω. It has two independent logic inputs, used to control the switching of each FET individually. In addition, the FETs have thermal shutdown protection and over-current shutdown functions.

Working Principle

The A6818SEPTR-T IC is based on the PMOS and NMOS field-effect transistors (FETs), which are the main building blocks of its power circuit. The power transistor consists of multiple well-connected sub-circuits, connected to the common-source terminal. The other terminals are connected to the gate, which is used to control the on/off state of the transistor. The PMOS and NMOS FETs control the current flow from the sources before the power transistor.

When the logical states at the two inputs of A6818SEPTR-T are high, the power transistor switches on and the current flows through the channel of the FET. When the states at the inputs of A6818SEPTR-T are low, the power transistor switches off and the current stops flowing through the channel of the FET. The FETs have thermal shutdown and over-current protection features. In addition, the A6818SEPTR-T IC is designed to reduce the power dissipation in the application and ensure that the output voltage is within allowable limits.

The A6818SEPTR-T IC is fabricated using a CMOS process, including Gate Oxide and floating gate technology. This reduces its low on-resistance, making it an ideal choice for applications requiring efficient power switches. Moreover, the PMIC A6818SEPTR-T has an adjustable dead-time feature. This feature helps reduce the power dissipation by allowing the FETs to turn off at certain intervals. This reduces the power dissipation and minimizes the generation of heat.

The A6818SEPTR-T IC is designed to control two independent N-channel MOSFETs, which are used for power distribution and load driving in low voltage 3V to 5.5V applications. The IC is designed to reduce the power dissipation and improve system efficiency in portable electronic applications. It has a built-in thermal protection and over-current protection features and adjustable dead-time feature.

The specific data is subject to PDF, and the above content is for reference

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