Allicdata Part #: | ACZRW5230B-G-ND |
Manufacturer Part#: |
ACZRW5230B-G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Comchip Technology |
Short Description: | DIODE ZENER 4.7V 350MW SOD123FL |
More Detail: | Zener Diode 4.7V 350mW ±5% Surface Mount SOD-123FL |
DataSheet: | ACZRW5230B-G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.03195 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 4.7V |
Tolerance: | ±5% |
Power - Max: | 350mW |
Impedance (Max) (Zzt): | 19 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 2V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123F |
Supplier Device Package: | SOD-123FL |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
ACZRW5230B-G Diodes - Zener - Single Application Field and Working Principle
ACZRW5230B-G is a single zener diode from the well-known semiconductor manufacturer Avnet. It is a low capacitance and low voltage zener diode with a wide operating temperature range from -65°C to 175°C. It has been widely used for reverse pipeline protection, transient pulse suppression, over-voltage clamping, and ESD protection. The ACZRW5230B-G diode has the following features and advantages:
- Low reverse current leakage – can be used for differential line protection and pulse suppression applications.
- Wide operating temperature range – can handle extreme temperature conditions.
- Low dynamic impedance – allows fast current switching and attenuation.
- High reliability – ensures long-term stability and protection.
- High power dissipation – handles high voltage transient pulses with ease.
ACZRW5230B-G zener diode mainly works in the reverse bias region. When a higher voltage is applied at the anode of the diode, the electric field will increase in the junction of the diode, creating a reverse breakdown that will allow electric current to flow from the cathode to the anode. The electric field increases more in the junction until it reaches the breakdown voltage. In this case, the diode will start conducting and the current will flow from cathode to anode. The rated breakdown voltage of ACZRW5230B-G diode is 5.23V, with a reverse current leakage less than 100nA at the nominal breakdown voltage. Its power dissipation capability is 500mW and its maximum junction temperature is 150°C. ACZRW5230B-G diode is used for various applications including:
- Differential line protection – protects the line from transient surges.
- Transient pulse suppression – used to reduce transient pulses.
- Over-voltage clamping – used to prevent over-voltage conditions in circuits.
- ESD protection – used to protect sensitive components from ESD.
The ACZRW5230B-G diode is suitable for applications where high temperatures and power dissipation are not required. It is ideal for use in low voltage and low power applications, as well as for providing reverse pipeline protection and transient protection. The diode has a small size (SOT-486) and is offered in both vertical and horizontal packages.
In conclusion, the ACZRW5230B-G is a single zener diode from Avnet that provides reverse bias protection, transient suppression, over-voltage clamping, and ESD protection in a wide range of applications. Its low dynamic impedance and wide operating temperature range make it an ideal solution for low voltage and low power applications, while its small size and vertical/horizontal packaging make it easy to use in tight spaces.
The specific data is subject to PDF, and the above content is for reference
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