ACZRT55C18-G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

ACZRT55C18-G diodes are one of the many varieties of single Zener diodes. Its application field and working principle are commonly understood among electrical engineers and technicians. This article discusses the distinguishing features and properties of the ACZRT55C18-G and introduces its application field and working principle.

Application Field

The ACZRT55C18-G is a relatively small diode suitable for many applications including overvoltage protection, reverse voltage protection, voltage regulation, voltage reference, and clamping. Typically, it is employed in the manufacture of integrated circuits, transistors, and other components requiring protection from high-voltage transients. The ACZRT55C18-G is also commonly used in the manufacture of motor vehicles, radios, TVs, security surveillance systems, robots, automation, and equipment related to industrial control. Similarly, this diode may also be used in audio-visual systems, telecom equipment, Hi-Fi systems, and other projects involving high-voltage applications.

Structure

The ACZRT55C18-G is constructed with a Schottky barrier contact. This type of contact provides fast switching times, making it ideal for switching high-frequency applications. The ACZRT55C18-G possesses superior heat sinking capability, low series resistance, and low capacitance. As such, it is capable of operating stably against rapid temperature changes. The useful life of the diode is very long and is normally specified at up to 50,000 hours. The rated working temperature range is between -55°C and 175°C.

Electrical Characteristics

The ACZRT55C18-G is rated for an operating current of 1000mA and a power dissipation of 0.75W. The maximum forward voltage drop is 0.75V, while the reverse current is typically 25mA. The reverse breakdown voltage is typically 5.3V. The diode’s reverse recovery time is typically 3micros and its surge rating is 4.8A.

Working Principle

The ACZRT55C18-G is designed to operate on the principle of Zener breakdown. It exhibits a near-constant voltage drop over its entire operating range, making it suitable for use in many applications. When operating in forward bias, the diode acts like a normal silicon diode, allowing a current to flow in one direction while blocking the current in the opposite direction. By contrast, when operating in reverse bias, the voltage applied to the diode exceeds a certain value referred to as the Zener breakdown voltage, which triggers a reverse breakdown, resulting in a very small current flowing in the reverse direction.

The ACZRT55C18-G has a breakdown voltage of 5.3V across its terminals. Under normal operating conditions, the diode will pass current in the reverse direction, providing a low-impedance path for dissipating electrical energy. This prevents excessive voltage from damaging other components or circuitry.

Conclusion

The ACZRT55C18-G is a single Zener diode with an application field and working principle that is widely used in electrical and electronics applications. This diode is relatively small, has fast switching times and excellent heat sinking capability, and it can be used to protect sensitive components from high voltages. Its unique design and operating principle allow it to provide stable performance against rapid temperature changes while offering a useful life of up to 50,000 hours.

The specific data is subject to PDF, and the above content is for reference