ADG1201BRJZ-R2

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1. Describe

The ADG1201BRJZ-R2 is a monolithic complementary metal oxide Semiconductor (CMOS) devices contain a unipolar, Single throw (SPST) switch designed in iCMOS® process. iCMOS is a modular manufacturing process that combines High voltage CMOS and bipolar technology. iCMOS Capable of developing a wide range of high-performance Analog IC Capable of Running at 33 V in Small Footprint The previous generation of high voltage equipment has been able to achieve. Unlike analog ICs using conventional CMOS During the process, iCMOS components can withstand high power voltage while providing higher performance, Significantly lower power consumption, and reduced Package Size. This ultra-low capacitance and charge injection switch makes it an ideal solution for data acquisition and sample-and-hold applications where low glitch and fast Settlement is required. Fast switching speed plus The high signal bandwidth also makes the device suitable for Video signal switching. iCMOS structure ensures ultra-low power consumption, making this device ideal for portable and battery powered instruments. The ADG1201 contains an SPST switch. this switching is performed equally well in both directions, and has Extends the input signal range to the power supply. closing conditions, signal levels up to power are blocked.

2. FEATURES

    1. 2.4 pF typical off switch source capacitance, dual supply

    2. <1 pC charge injection

    3. Low leakage: 0.6 nA maximum at 85°C

    4. 120 Ω typical on resistance at 25°C, dual supply

    5. Fully specified at ±15 V, +12 V

    6. No VL supply required

    7. 3 V logic-compatible inputs

        - VINH = 2.0 V minimum

        - VINL = 0.8 V maximum

    8. Rail-to-rail operation

    9. 6-lead SOT-23 package

3. APPLICATIONS

    1. Automatic test equipment

    2. Data acquisition systems

    3. Battery-powered systems

    4. Sample-and-hold systems

    5. Audio signal routing

    6. Video signal routing

    7. Communication systems