ADL5335ACPZN-R7 Allicdata Electronics
Allicdata Part #:

ADL5335ACPZN-R7-ND

Manufacturer Part#:

ADL5335ACPZN-R7

Price: $ 9.06
Product Category:

RF/IF and RFID

Manufacturer: Analog Devices Inc.
Short Description: MACRO TX DGA
More Detail: RF Amplifier IC General Purpose 700MHz ~ 4.2GHz 16...
DataSheet: ADL5335ACPZN-R7 datasheetADL5335ACPZN-R7 Datasheet/PDF
Quantity: 1000
1500 +: $ 8.23655
Stock 1000Can Ship Immediately
$ 9.06
Specifications
Series: --
Part Status: Active
Frequency: 700MHz ~ 4.2GHz
P1dB: 18.3dBm
Gain: 13dB
Noise Figure: 8.3dB
RF Type: General Purpose
Voltage - Supply: 4.75 V ~ 5.25 V
Current - Supply: 125mA
Test Frequency: 925MHz ~ 4.2GHz
Package / Case: 16-WQFN Exposed Pad, CSP
Supplier Device Package: 16-LFCSP (4x4)
Base Part Number: ADL5335
Description

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RF amplifiers are electronic devices that are used to increase the power of radio frequency signals. The power of the signal is measured in watts or decibels, and amplifiers are used to make the signal stronger. One of the most popular RF amplifiers on the market today is the ADL5335ACPZN-R7. Its wide range of applications and excellent performance make it a favorite among consumers.

The ADL5335ACPZN-R7 is a wideband, dual-core amplifier that supports a maximum operating frequency of over 4GHz. It operates on a single 5.0V supply and has excellent power efficiency. The gain control range of the amplifier is 11 to 46dB with excellent gain flatness. The amplifier also features high linearity and low distortion, making it ideal for base station and broadband applications.

The most common applications of the ADL5335ACPZN-R7 include cable systems, Wi-Fi, radar, and satellite communications. The device is particularly useful for applications that require a large bandwidth and low noise performance. It is also ideal for wireless applications that require high stability and good gain control. The amplifier also offers excellent protection against overloading, which makes it a reliable and safe choice for any RF application.

Aside from its excellent performance and wide range of applications, the ADL5335ACPZN-R7 also has an excellent working principle. The amplifier is based on an advanced GaN process technology that leverages a unique 3D mesh structure. This ensures that the amplifier can achieve high power, great efficiency, and low distortion. It also ensures that the amplifier is immune to variations in input temperature and operating frequency.

The power efficiency of the amplifier is up to 7 dB better than other traditional amplifiers. This ensures that the device consumes less power and offers a longer service life. The amplifier also has a very low noise figure, which makes it ideal for low noise applications. It also has great power factor correction and is highly efficient in power consumption.

In short, the ADL5335ACPZN-R7 is an excellent choice for any application that requires a reliable and efficient RF amplifier. Its wide range of applications, excellent performance, and working principle make it a great choice for any type of RF project. It is a reliable and efficient device that offers a long service life and great performance in any application.

The specific data is subject to PDF, and the above content is for reference

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