
Allicdata Part #: | AIKW40N65DF5XKSA1-ND |
Manufacturer Part#: |
AIKW40N65DF5XKSA1 |
Price: | $ 4.52 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IC DISCRETE 650V TO247-3 |
More Detail: | IGBT |
DataSheet: | ![]() |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 4.10760 |
10 +: | $ 3.70818 |
100 +: | $ 3.06980 |
500 +: | $ 2.67313 |
1000 +: | $ 2.32820 |
Series: | * |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Moisture Sensitivity Level (MSL): | -- |
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AIKW40N65DF5XKSA1 application field and working principle
Insulated Gate Bipolar Transistor (IGBT) are type of Transistors, particularly, single. They are generally used as high powered amplifiers that can handle up to hundreds of amperes and several thousand Volts. AIKW40N65DF5XKSA1 is a IGBT manufactured by Infineon, and the following discusses its application field and working principles.
Application
AIKW40N65DF5XKSA1 is a High Power IGBT, and is mainly used in the fields of motor control, welding and Uninterruptible Power Supply (UPS). AIKW40N65DF5XKSA1 can be used to control three-phase motors for air conditioners, washing machines and fans. In welding power supplies, it is used in conjunction with semiconductor switches to adjust the arc current. On UPS, it is used in order to convert charge and discharge power quickly, with high efficiency and without generating too much heat.
Characteristics and Working Principle
AIKW40N65DF5XKSA1 provides an efficient power conversion switch with low ON-resistance and high current handling capabilities. It allows the switching of power up to 1,870 Volts and 40 Amperes. The IGBT chip used within AIKW40N65DF5XKSA1 is creepage distance and clearance compliant, exhibits low noise and EMI and can increase efficiency. AIKW40N65DF5XKSA1 is designed in such way that switches from ON to OFF or vice versa in a very short time.
The working principle of AIKW40N65DF5XKSA1 is based on the combination of two Transistors in one device: the insulated-gate Field Effect Transistor (FET) and the bipolar Transistor. A powerful FET is employed to control the current of the bipolar Transistor, in order to effectively switch the power. AIKW40N65DF5XKSA1 has a self-protected feature, which means that its performance will be preserved even in case of magnetic asynchrony or misalignment, so as to avoid breakdown.
AIKW40N65DF5XKSA1 is a powerful IGBT, which can be successfully employed on a variety of applications that require high power. It combines efficiency and versatility, making it a high quality IGBT.
The specific data is subject to PDF, and the above content is for reference
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