
Allicdata Part #: | AIKW50N60CTXKSA1-ND |
Manufacturer Part#: |
AIKW50N60CTXKSA1 |
Price: | $ 5.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IC DISCRETE 600V TO247-3 |
More Detail: | IGBT Trench Field Stop 600V 80A 333W Through Hole ... |
DataSheet: | ![]() |
Quantity: | 220 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 4.77540 |
10 +: | $ 4.31361 |
100 +: | $ 3.57116 |
500 +: | $ 3.10971 |
1000 +: | $ 2.70846 |
Power - Max: | 333W |
Supplier Device Package: | PG-TO247-3 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Test Condition: | 400V, 50A, 7 Ohm, 15V |
Td (on/off) @ 25°C: | 26ns/299ns |
Gate Charge: | 310nC |
Input Type: | Standard |
Switching Energy: | 1.2mJ (on), 1.4mJ (off) |
Series: | Automotive, AEC-Q101, TrenchStop™ |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 50A |
Current - Collector Pulsed (Icm): | 150A |
Current - Collector (Ic) (Max): | 80A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
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AIKW50N60CTXKSA1 is an Insulated Gate Bipolar Transistor (IGBT) manufactured by ON Semiconductor. This model is a medium-voltage device manufactured using advanced trench technology. It is designed for use in high power applications such as motor controls, inverters for renewable energy systems, welding systems and UPS.
AIKW50N60CTXKSA1 is part of the IGBT family, with single-chip gate turn-on and turn-off capability. It has an innovative structure that combines a high-voltage insulated gate transistor and low-voltage insulated gate transistor on the same structure. This enables the device to provide superior switching performance while consuming minimal power.
The working principle of AIKW50N60CTXKSA1 is based on the same principle as other IGBTs. It works by controlling the voltage induced in its gate to alter the current that flows through its terminals. When the gate voltage is high, a small current will flow through. When this current reaches a certain threshold, it causes an avalanche breakdown, switching the IGBT on. Lowering gate voltage will shut the IGBT off, effectively blocking the current flow.
As with other IGBTs, AIKW50N60CTXKSA1 is designed to be used in medium voltage applications up to 600V. It is also capable of handling high power applications up to 150A with a maximum transient frequency of 3300kHz. Given the versatile nature of IGBTs, AIKW50N60CTXKSA1 can be used in various medium voltage applications such as motor controls, switch mode power supplies and lighting control.
AIKW50N60CTXKSA1 has several features and built-in protections to ensure safety and reliability. These include short-circuit protection, over-temperature protection, over-voltage protection, under-voltage protection, over-current protection and supply voltage transients up to 500V. These features make AIKW50N60CTXKSA1 an ideal choice for high-power and medium-voltage applications.
In summary, AIKW50N60CTXKSA1 is a single-chip IGBT suited for medium voltage applications. It is designed with an advanced trench technology, capable of handling high power applications with built-in protection features to ensure safe operation. AIKW50N60CTXKSA1 is suitable for motor controls, switch mode power supplies, lighting control and other applications.
The specific data is subject to PDF, and the above content is for reference
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