
Allicdata Part #: | AIKW50N65DF5XKSA1-ND |
Manufacturer Part#: |
AIKW50N65DF5XKSA1 |
Price: | $ 5.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IC DISCRETE 650V TO247-3 |
More Detail: | IGBT |
DataSheet: | ![]() |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 4.63680 |
10 +: | $ 4.18635 |
100 +: | $ 3.46576 |
500 +: | $ 3.01794 |
1000 +: | $ 2.62853 |
Series: | * |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Moisture Sensitivity Level (MSL): | -- |
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IGBTs, or Insulated Gate Bipolar Transistors, are devices that combine the advantages of both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and bipolar transistors (BJTs). They are widely used in applications such as power supplies, motor control, and automotive electronics. The AIKW50N65DF5XKSA1 is a single IGBT, which is suitable for many different applications.
The AIKW50N65DF5XKSA1 has a collector-emitter breakdown voltage of 650V, a continuous collector current rating of 50A, and a maximum collector dissipation of 174W. It is capable of operating at frequencies up to 20kHz. It has a minimum operating temperature of -40°C and a maximum operating temperature of 175°C. With these features, the AIKW50N65DF5XKSA1 can be used for a variety of power electronics applications.
The AIKW50N65DF5XKSA1 works by allowing a voltage to be applied to the gate, which creates an electric field between the collector anode and the emitter cathode. This produces a conductive channel and electrons flow from the collector to the emitter, creating a current. The amount of current is determined by the voltage applied to the gate, so it is possible to adjust the current by controlling the gate voltage. This makes it ideal for use in applications such as motor control, where it is important to be able to control the amount of current power.
As well as motor control, the AIKW50N65DF5XKSA1 is also suitable for use in applications such as power supplies, DC-DC converters, and inverters. It is also well suited to automotive electronics applications, such as IGBT dimming and lighting control. In such applications, the AIKW50N65DF5XKSA1 is capable of handling high voltages and currents, while providing a high degree of reliability and efficiency.
The AIKW50N65DF5XKSA1 is a versatile, reliable, and efficient IGBT that is suitable for many different applications. It is capable of operating at up to 20kHz and has a continuous collector current rating of 50A. It has a collector-emitter breakdown voltage of 650V and a maximum collector dissipation of 174W. It has a minimum operating temperature of -40°C and a maximum operating temperature of 175°C. These features make the AIKW50N65DF5XKSA1 suitable for power electronics, motor control, and automotive electronics applications, where it is capable of handling high currents and voltages, while providing high reliability and efficiency.
The specific data is subject to PDF, and the above content is for reference
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