AIKW50N65DH5XKSA1 Allicdata Electronics
Allicdata Part #:

AIKW50N65DH5XKSA1-ND

Manufacturer Part#:

AIKW50N65DH5XKSA1

Price: $ 5.10
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IC DISCRETE 650V TO247-3
More Detail: IGBT
DataSheet: AIKW50N65DH5XKSA1 datasheetAIKW50N65DH5XKSA1 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 4.63680
10 +: $ 4.18635
100 +: $ 3.46576
500 +: $ 3.01794
1000 +: $ 2.62853
Stock 1000Can Ship Immediately
$ 5.1
Specifications
Series: *
Part Status: Active
Lead Free Status / RoHS Status: --
Moisture Sensitivity Level (MSL): --
Description

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IGBT(Insulated Gate Bipolar Transistor) is an acronym for a type of power semiconductor device commonly used in the electronics industry. AIKW50N65DH5XKSA1 is an IGBT module. It combines an insulated gate field effect transistor (IGFET) and a bipolar power transistor in a single device. This type of device offers high power efficiency, low power dissipation, high speed switching, and superior overload protection.

The AIKW50N65DH5XKSA1 IGBT features a direct component mount and a built-in fault protection circuit, which makes it ideal for a wide range of applications, such as motor controllers, inverters, AC/DC converters, and inverters.

The AIKW50N65DH5XKSA1 IGBT features a well-matched design that provides the highest efficiency while maintaining superior thermal characteristics. Its maximum current rating is 50A, with a maximum reverse recovery time of 30ns. The power transistors feature a special film structure which enables this IGBT to provide crisp, high-speed switching speeds. The module also has a low forward voltage drop for lower energy losses.

The AIKW50N65DH5XKSA1 is a high-power IGBT module which can handle up to 1250V. In addition, it offers overcurrent protection and reverse voltage protection to ensure reliable operation. It also features a built-in undervoltage lockout (UVLO) which helps protect its gate from high voltage stressing during turn-on and turn-off operations. It is available in an industry-standard 3-pin package.

The AIKW50N65DH5XKSA1 IGBT operates on the principle of a combined field-effect transistor (FET) and bipolar power transistor. The FET forms the control element, while the power components form the conduction element. When a voltage is applied to the control electrodes, the FET is triggered and allows current to flow through the conduction channel. This current forms a low resistance channel which amplifies the voltage applied to the conduction element and presents a low flow resistance. The current through the IGBT causes the power transistor to turn off and prevent the flow of current. This reduces the overall resistance and conserves power.

The AIKW50N65DH5XKSA1 is an IGBT module which can be used for various power applications, such as motor control, power supplies, and power converter. This IGBT module is highly reliable and energy-efficient, making it an excellent choice for power applications. It has superior thermal characteristics, low forward voltage drop, and overcurrent protection, which ensure its reliable operation in harsh operational conditions. In addition, it features a built-in undervoltage lockout circuit to prevent high voltage stressing during turn-on and turn-off operations. The AIKW50N65DH5XKSA1 IGBT is a powerful and reliable power solution for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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