ALD310704ASCL Allicdata Electronics
Allicdata Part #:

1014-1294-ND

Manufacturer Part#:

ALD310704ASCL

Price: $ 3.09
Product Category:

Discrete Semiconductor Products

Manufacturer: Advanced Linear Devices Inc.
Short Description: MOSFET 4 P-CH 8V 16SOIC
More Detail: Mosfet Array 4 P-Channel, Matched Pair 8V 500mW S...
DataSheet: ALD310704ASCL datasheetALD310704ASCL Datasheet/PDF
Quantity: 1000
50 +: $ 2.80388
Stock 1000Can Ship Immediately
$ 3.09
Specifications
Series: EPAD®, Zero Threshold™
Packaging: Tube 
Part Status: Active
FET Type: 4 P-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: 380mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: --
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
Description

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The ALD310704ASCL is a transistor array designed for use in practical applications. It consists of two dual common-source/common-drain N-channel MOSFETs arranged in a side-by-side configuration. This type of device is frequently used in audio circuits and is an excellent choice for applications featuring high frequencies, such as switch-mode power supplies, instrumentation amplifiers, and other high-speed circuits.

The ALD310704ASCL is a high-density device, with both transistors operating in parallel with each other. This enables it to offer high current carrying capability, without suffering from thermal runaway or suffering from high on resistance. Furthermore, its low RDS (on) characteristics help to ensure that power dissipation is kept to a minimum.

The ALD310704ASCL is constructed using a field-effect transistor (FET) array design, which makes it ideal for applications that require more than two transistors in the same package, such as oscillators and multiple-input/multiple-output circuits. In addition, the device features an enhanced shielding structure, enabling it to handle high frequencies without any negative effects.

The ALD310704ASCL’s operating principles are fairly straightforward. When a current passes through the drain, electrons flow between the source and the drain, and the conduction circuit is completed. This creates an electric field between the source and the drain and the electrons are said to be “doped” onto the gates of the transistor. This electric field is what determines the amount of current flowing through the device and can be adjusted by varying the gate voltage.

In more complex circuits, this basic operating principle can be employed to create an array of transistors, as found in the ALD310704ASCL device, with each transistor operating independently. This allows multiple circuits to be operated in parallel, making the device an ideal choice for power amplifiers and video or audio switching circuits.

In addition to its usage in audio and video applications, the ALD310704ASCL can also prove useful in a variety of other applications, such as the control of power-switching systems, phase locked data recovery circuits, and clock distribution systems. In general, this device is an ideal choice for a wide range of applications, owing to its high-density design, low RDS (on), and shielding characteristics.

The specific data is subject to PDF, and the above content is for reference

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