AO9926B Allicdata Electronics
Allicdata Part #:

785-1100-2-ND

Manufacturer Part#:

AO9926B

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET 2N-CH 20V 7.6A 8-SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 20V 7.6A 2W Surfac...
DataSheet: AO9926B datasheetAO9926B Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.6A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Description

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The AO9926B belongs to the family of Power Mosfet devices which are designed to meet the demand of high power loss, high efficiency and low on-resistance. These devices are ideal for use in applications such as motor drive circuits and switching power supplies that require reliable performance with high power dissipation. It is designed with a low on-resistance and utilizes a Gate drive circuit that nearly eliminates cross-over effects during switching thereby enabling the user to achieve higher efficiency in a wide range of operating conditions.

The AO9926B is a three-transistor array that provides an integrated source for a high power load. It is constructed using advanced CMOS technology and provides a wide range of features to meet the special needs of power applications. The device features medium threshold-voltage and self-biased circuitry that allow for its use in a variety of configurations. Its features also include a thermal protection mechanism to protect the device from over-temperature conditions, a fail-safe circuit to prevent latch-up in the event of a short circuit operation between the gate and drain, and an integrated Gate driver that eliminates the need for an external gate driver.

The AO9926B has a variety of applications in which it can be used. It can be used to drive a wide range of loads such as motors, relays, power supplies and LEDs. It can also be used in switching power supplies as well as DC-DC converters. Due to its ultra low on-resistance and high efficiency, it is suitable for applications that require high power dissipation such as motor control, motor drives, LED lighting systems and LED backlighting.

The working principle of the AO9926B is based on MOSFET technology. The device is constructed using three transistors in parallel, each of which has its own gate electrode. The gate electrode of each transistor is connected to an input signal which controls the current flowing through the device. When an input signal is applied, the voltage across the gate of each transistor modifies the current flow in the source and drain. This creates a power gain of the device, as the current is amplified. Although the AO9926B utilizes a MOSFET-like technology to produce its power gain, the device is still dependent upon the input signal to control the current flow through the device and therefore relies upon the user’s discretion to switch the device on and off.

In summary, the AO9926B is a three-transistor array of power devices which are designed to provide a high power load with low on-resistance, high efficiency and reliable performance. Its MOSFET technology, wide range of features and low on-resistance make it suitable for use in a variety of applications requiring high power dissipation. The device relies upon an input signal to control the current through the device, and therefore requires the user’s discretion to switch the device on and off.

The specific data is subject to PDF, and the above content is for reference

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