AO9926C

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AO9926C application field and working principle

The AO9926C is the newest, most efficient, and most robust N-channel enhancement mode MOSFET array on the market today. It is designed to provide excellent power efficiency, low power consumption and high switching speeds in motor and analog control applications. It is also designed to be suitable for a wide range of applications where power efficiency is required, such as for low power consumption and high switching speeds in motor or analog control applications.

The AO9926C is composed of two N-channel enhancement mode silicon transistors (N1, N2) with a P-channel ESD protection device (P1). It utilizes advanced processing and packaging technology. All of the N-channel enhancement mode MOSFETs are fabricated in a standard 0.5 um process and are housed in an ultra-small 3.2 x 3.2 mm, 0.5 mm pitch Quad Flat No-leads (QFN) package. The package includes all the necessary ESD and thermal protection devices.

The AO9926C can provide performance characteristics of up to 30 A continuous drain current (ID), 100 V drain-source voltage (VDS) ratings, and 2.2 A gate-source current (ID) at high temperatures. It also has an ultra-low on-state resistance (RDS(ON)) of 1.1 milliohms for low voltage drop and low power loss, and a maximum transient frequency of 10 MHz for fast switching speeds.

The AO9926C’s main function is to provide an efficient power switching service with enhanced protection features. Its low on-resistance, low gate voltages and low off-state current enable it to provide low energy switching and improved voltage regulation. The AO9926C features over-voltage protection, reverse bias protection, over-current protection, reverse leakage protection and ESD protection.

The AO9926C works by allowing the current to flow through it when the source voltage (VGS) is applied and the gate voltage (VGS) is below the threshold voltage (VGS(TH)). As the gate voltage is increased, the MOSFET’s Drain-Source resistance (RDS) decreases, allowing more current to flow. As the gate voltage is further increased, the MOSFET is closed and the device enters a conductivity enhancement mode. This mode is identified by its steadily rising current, as the VGS is further increased.

The AO9926C is primarily used in motor and analog control applications, primarily due to its high switching speed, low on-state losses and low power dissipation levels. The device can also be used in many other applications where high power efficiency is desired. The device is highly reliable and robust, making it suitable for use in a wide range of applications.

In summary, the AO9926C is a new, efficient, and robust N-channel enhancement mode MOSFET array. It provides excellent power efficiency, low power consumption and high switching speeds. It has a low on-resistance, low gate voltages and low off-state current. It is designed with advanced fabrication and packaging technology and is suitable for a wide range of applications. It also has comprehensive protection features, making it reliable and robust for use in demanding applications such as motor and analog control.

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