AOC3860A

Series:	--
Part Status:	Preliminary
FET Type:	2 N-Channel (Dual) Common Drain
FET Feature:	Standard
Drain to Source Voltage (Vdss):	12V
Current - Continuous Drain (Id) @ 25°C:	25A (Ta)
Rds On (Max) @ Id, Vgs:	3.5 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	44nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	--
Power - Max:	2.5W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	4-SMD, No Lead
Supplier Device Package:	4-AlphaDFN (3.05x1.77)

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IntroductionThe AOC3860A, also known as an array of n-channel field-effect transistors (FETs), comes from a family of high-performance devices that are ideal for applications in which a linear low-amplitude voltage signal needs to be amplified or switched at higher frequencies. This type of transistor is preferred by designers in the field of device electronics who are looking to achieve a high level of performance and reliability without having to go beyond their budget.Application FieldOne of the most popular uses of AOC3860A arrays is in high-amplitude power amplifier applications, where the high drive capability of this device makes it an ideal choice for achieving both high-gain, high-power operation and accurate control over the amplitude of the voltage signal being amplified. This device is also a good option in low-noise, low-power amplifier designs, as its integrate architecture provides excellent stability, reliability and low distortion levels.This device also has other applications in consumer electronics, such as switching between programming modes, and in industrial electronics, such as in high-reliability, continuous duty process controllers. Due to its low-power capabilities, AOC3860A arrays can be used to support complex logic implementations, particularly when designed into multi-layered circuit configurations.Working PrincipleAt the heart of the AOC3860A is the use of an array of 393 closely-spaced FETs. Each FET acts as its own amplifier, controlling the amount of current flow into the main body of the array. Whenever a voltage is impressed onto the array, the FETs react by allowing current to flow. The resulting effect is that the voltage or other electrical field around the device is modified and can be used to amplify or switch a low-amplitude voltage signal.The device works by taking the advantage of the high drive capability of the FETs to form a high-gain amplifier or switch. By controlling the bias level of the FETs, their gate capacitance, their drain-source impedance and by varying the size and shape of the array, the designer can achieve a wide variety of performance characteristics.ConclusionThe AOC3860A array of n-channel FETs is a high-performance device that can be used in a wide range of amplifier and switch applications. Its integrate architecture makes it a reliable choice of device, while its low power capabilities mean it can be used in multi-layered circuit configurations. Through careful control of voltage, current and bias levels, designers can use this device to amplify or switch low-amplitude voltage signals at higher frequencies.

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