Allicdata Part #: | ARF1511MS-ND |
Manufacturer Part#: |
ARF1511 |
Price: | $ 139.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | RF PWR MOSFET 500V 20A DIE |
More Detail: | RF Mosfet 4 N-Channel 380V 40.7MHz 15dB 750W Die |
DataSheet: | ARF1511 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 126.40600 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | 4 N-Channel |
Frequency: | 40.7MHz |
Gain: | 15dB |
Voltage - Test: | 380V |
Current Rating: | 20A |
Noise Figure: | -- |
Power - Output: | 750W |
Voltage - Rated: | 500V |
Package / Case: | Die |
Supplier Device Package: | Die |
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ARF1511 is a RF metal oxide semiconductor field-effect transistor (MOSFET), which is available in a plastic package (small outline plastic package or SOP-14) having an internal cavity that houses the internal devices of the MOSFET.
The ARF1511 is a N-channel enhancement mode MOSFET and is typically used as a voltage-controlled switch. It is a preferred solution for RF applications such as RF power amplifiers, RF transmitters, receivers and switches. The device is also used in Digital Wireless Communications base-stations, radar systems, missile guidance systems and other high frequency applications.
The working principle of the ARF1511 is based on the movement of free electrons in the semiconductor material. When a small voltage is applied to the gate of the transistor, it creates an electric field inside the MOSFET which causes the free electrons to move from one side to the other. This change in electron movement creates a current path between the source and the drain, known as the drain current. This current allows a voltage difference to be developed across the drain and source, allowing current to flow through the transistor.
The accuracy and precision of the ARF1511 are extremely important factors to consider when developing high frequency applications. First, the impedance must be ideal to ensure that the resulting signal remains at the specified frequency without distortion. The gate threshold voltage also has a direct influence on the accuracy, as it determines the gate-source voltage that must activated before current can flow. Next, the layout of the design must be optimized to ensure that the minimum amount of voltage is needed to activate the device.
As a result, the power amplifier design must not only be optimized for the right applications, but also be finished and fine-tuned to get the most out of the MOSFET. The design must consider various parameters such as the gate threshold voltage, gate-source capacitance, ON-resistance, power dissipation, output power and third-order distortion.
The ARF1511 is widely used in both mobile and base-station communication systems and is widely chosen by designers for its superior characteristics. The superior characteristics include low noise, high linearity, high output power and efficiency, and excellent reliability. The device is capable of handling both small signals and large signals, allowing it to be used in demanding applications.
Overall, the ARF1511 is an ideal solution for RF applications, particularly when superior performance, accuracy, and dependability are paramount. The high level of control provided by the device ensures that power devices can be fine-tuned and optimized for the right application. Furthermore, the device’s excellent reliability and low noise performance make it an ideal choice for both base-station and mobile communication systems.
The specific data is subject to PDF, and the above content is for reference
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