AS3PM-M3/86A Allicdata Electronics
Allicdata Part #:

AS3PM-M3/86ATR-ND

Manufacturer Part#:

AS3PM-M3/86A

Price: $ 0.22
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE AVALANCHE 1KV 2.1A TO277
More Detail: Diode Avalanche 1000V 2.1A (DC) Surface Mount TO-2...
DataSheet: AS3PM-M3/86A datasheetAS3PM-M3/86A Datasheet/PDF
Quantity: 1000
4500 +: $ 0.20315
Stock 1000Can Ship Immediately
$ 0.22
Specifications
Series: eSMP®
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 2.1A (DC)
Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2µs
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: AS3PM
Description

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AS3PM-M3/86A is a single rectifier diode which is a semiconductor device which allows electrical conduction in only one direction. It is typically used in applications where power rectification, power switching and voltage regulation are needed. It is designed for use in various applications such as lighting, rectification, and overload and short-circuit protection.

Application Field

AS3PM-M3/86A is commonly used in lighting applications as it offers a low forward voltage drop and a high peak current rating. The device is suitable for use in low power rectifiers, power supplies, and other AC/DC conversion applications. It can also be used in voltage regulation and switching applications. This diode provides excellent overvoltage protection and excellent performance in short-circuit, overload, and high frequency switching applications.

Working Principle

The working principle of AS3PM-M3/86Arectifierdiode is based on the passivating layer formed around the junction of the p-type silicon and the n-type silicon. When the voltage of anode is higher than that of the cathode, the rectifying action takes place in the semiconductor device. This is due to the formation of depletion layer between the highly and less doped junction regions of the diode. The current will only flow in the forward direction in this case, this is known as forward biasing. On the other hand, when the voltage of the anode is lower than that of the cathode, the depletion layer will not form, thus leaving a conducting path between the P and N type materials, thus allowing current to flow in the opposite direction, which is known as reverse biasing.

The specific data is subject to PDF, and the above content is for reference

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AS3PDHM3/86A Vishay Semic... 0.0 $ 1000 DIODE AVALANCHE 200V 2.1A...
AS3PKHM3_A/H Vishay Semic... 0.29 $ 1000 DIODE AVALANCHE 800V 2.1A...
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AS3PGHM3_A/H Vishay Semic... 0.29 $ 1000 DIODE AVALANCHE 400V 2.1A...
AS3PKHM3_A/I Vishay Semic... 0.27 $ 1000 DIODE AVALANCHE 800V 2.1A...
AS3PDHM3_A/I Vishay Semic... 0.27 $ 1000 DIODE AVALANCHE 200V 2.1A...
AS3PKHM3/86A Vishay Semic... 0.0 $ 1000 DIODE AVALANCHE 800V 2.1A...
AS3PG-M3/87A Vishay Semic... 0.18 $ 1000 DIODE AVALANCHE 400V 2.1A...
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