AS7C1024B-12TJIN Allicdata Electronics
Allicdata Part #:

1450-1191-5-ND

Manufacturer Part#:

AS7C1024B-12TJIN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 1M PARALLEL 32SOJ
More Detail: SRAM - Asynchronous Memory IC 1Mb (128K x 8) Paral...
DataSheet: AS7C1024B-12TJIN datasheetAS7C1024B-12TJIN Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 32-SOJ
Description

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AS7C1024B-12TJIN is a dynamic random access memory (DRAM) product designed using 12T (transistor) process technology. It is specially designed for high-performance embedded systems and applications.

The AS7C1024B-1tTJIN is an asynchronous DRAM device with a maximum clock speed of 133MHz. It comes with a limited number of features and an integrated power management module that enables it to be used in battery-powered systems and applications. The memory controller offers advanced features such as automatic refresh rate control, burst accesses and fast power-down modes.

The AS7C1024B-12TJIN memory can work in both single-cycle and two-cycle operation. It offers an array of 1024K-bit cells and a 17-bit programmable column address width. The device has a power supply voltage range of 1.7V to 2.0V, with a VREF of 1.575V. This memory also supports a clock speed frequency range of 8MHz to 133MHz.

The AS7C1024B-12TJIN is designed for use in applications such as gaming, industrial control, scientific instrumentation and automotive. It is also suitable for use in digital media, notebook PCs and medical devices. Its wide voltage and frequency range support makes it versatile and easy to integrate into different systems. Additionally, it offers high performance and low power consumption, making it an ideal choice for embedded devices.

The working principle of AS7C1024B-12TJIN is simple. The memory consists of an array of data cells that are arranged in columns and rows. Each cell stores a bit of information, which can be retrieved, modified and written back to memory. In order to access and write data, a row address and column address is sent to the memory module. The desired data is then accessed and written to the cells under the control of a clock signal.

The AS7C1024B-12TJIN is a reliable and efficient memory that is suitable for a variety of applications. It offers fast data access and a low voltage range, making it an ideal choice for embedded devices. Additionally, its integrated power management module and advanced features make it an excellent choice for battery-powered systems.

The specific data is subject to PDF, and the above content is for reference

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