AS7C32098A-20TCNTR Allicdata Electronics
Allicdata Part #:

AS7C32098A-20TCNTR-ND

Manufacturer Part#:

AS7C32098A-20TCNTR

Price: $ 2.54
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 2M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 2Mb (128K x 16) Para...
DataSheet: AS7C32098A-20TCNTR datasheetAS7C32098A-20TCNTR Datasheet/PDF
Quantity: 1000
1000 +: $ 2.30698
Stock 1000Can Ship Immediately
$ 2.54
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (128K x 16)
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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AS7C32098A-20TCNTR: Memory

AS7C32098A-20TCNTR is a type of memory product from Integrated Device Technology (IDT). It is a high speed, low power, non-volatile static random access memory (SRAM) device, designed for use in a wide range of applications that require fast, reliable and low power memory. This device is particularly suited to applications that require quick access times, high density, low power consumption and maximum reliability.

Application Field

AS7C32098A-20TCNTR is widely used in the most demanding applications such as wireless handsets, digital cameras, imaging devices, personal digital assistants (PDAs) and other devices that require non-volatile memory. It is also used in avionics and embedded applications due to its high speed and low power consumption. Other applications include storage, medical and industrial automation.

The device has been designed with an ultra-low-voltage range allowing for easy integration into low voltage applications and power systems. It also has an advanced internal EEPROM for reliable non-volatile data storage, allowing for superior optimization of memory access. This nonvolatile design ensures that stored data will survive after a period of prolonged power loss or system reset, thus eliminating the need for a separate backup battery.

Working Principle

The AS7C32098A-20TCNTR is a static random access memory (SRAM) device. SRAM memory is configured in a ‘memory cell’ and stores data in an array of capacitive cells. When applied with an electric current, the capacitors in each cell stores an electrical charge. This charge state then determines the logic state of the associated cell. The data stored in the memory cell is not lost when power is removed from the system and can be accessed quickly, as opposed to Dynamic Random Access Memory (DRAM) which requires periodic refreshing.

The AS7C32098A-20TCNTR has a 6.4 nanosecond internal cycle time, resulting in fast access, maximum throughput and high operation speed. This fast access is achieved through direct interfacing with the processor, improving system power and speed, as well as reducing system latency. Low power consumption of 20 milliwatts (mW) makes the device suitable for applications that require low power operations. The device also includes a number of features that reduce power consumption even more, such as automatic sleep mode.

Conclusion

AS7C32098A-20TCNTR is a high speed, low power, non-volatile static random access memory (SRAM) device that can be integrated into a wide variety of applications. It is designed to provide fast access times and low power consumption in order to maximize system performance. Its 6.4 nanosecond internal cycle time and 20 mW power consumption makes it a viable choice for applications that require fast, reliable and low power memory.

The specific data is subject to PDF, and the above content is for reference

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