AS7C1024C-12TJIN

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AS7C1024C-12TJIN memory is a variant in a family of high-speed static random access memories (SRAMs). One of the most notable features of this type of memory is its ability to store large amounts of data quickly and reliably. This characteristic makes SRAMs ideal for use in many applications, such as IC (integrated circuit) memory, data processing, video editing, and digital signal processing.

The AS7C1024C-12TJIN Memory is based on a 0.18-micron transistor-to-memory cell ratio CMOS technology. It is designed to store 270 kbytes of data with a data rate bandwidth of 12 Mbps. It is non-volatile, meaning the data stored will not be lost in the event of power failure or system reset.

The AS7C1024C-12TJIN Memory is composed of two primary components: the sense amplifying chip, and the memory array. The sense amplifying chip is used to detect signals to determine when data is to be stored or retrieved from the memory array. The memory array consists of 512 addressable cells, each of which is capable of storing 8 bits of data. This means the AS7C1024C-12TJIN Memory can store up to 2,097,152 bits of data.

The AS7C1024C-12TJIN Memory operates in an asynchronous fashion, meaning that it does not require any external clock signals for data access. The devices are asynchronous, allowing the user to access the data without the need for any external clock sources. This allows for a more efficient access of data and reduces system complexity, which can help with cost reduction in systems that require multiple memories.

The AS7C1024C-12TJIN Memory can be used in a variety of applications, such as automotive, medical, telecommunications, industrial, and consumer products. The device is also used in memory-intensive applications such as firmware, operating systems, video processing, gaming, and multimedia. The device is also suitable for mission-critical applications that require reliability and low power consumption.

The AS7C1024C-12TJIN Memory is an excellent choice for applications that require high-speed access and a large memory capacity. The device is available in a range of packages, including SDIP-6, SOIC-8 and TSOP-8, making it suitable for many circuit board designs. The device is also designed to operate in extreme temperature ranges and can withstand ESD and other stresses. Because of its fast data access, robust design, and expansive memory capacity, the AS7C1024C-12TJIN Memory has become a popular choice for many different applications.

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