AS7C34096A-15TINTR

Memory: AS7C34096A-15TINTR Application Field and Working Principle

The AS7C34096A-15TINTR is a 64K x 36 bit high-speed asynchronous static random access memory (SRAM) that supports asynchronous read and write operations. This product uses the latest STMicroelectronics’s two-transistor static memory cell for low power operation and fast access times. The SRAM is organized as 65536 x 36 bits, allowing the device to store data in 36-bit words.

The AS7C34096A-15TINTR is aimed at low-power embedded and portable applications, such as routers, switches, HD video files, portable gaming devices and digital video cameras. This device can offer high-speed operation up to 166MHz. The device’s dynamic power consumption is less than 10 μA/MHz and its static power consumption is about 1 μA/MHz.

The AS7C34096A-15TINTR also features a power-saving Deep Power-down mode and a Self Refresh mode, which can reduce the chip\'s power consumption to a minimum. The SRAM has a 16-bit-wide data bus and a 5-bit rollover check bit, so users can easily detect the transfer error. It also supports a single-cycle write-reload time that can give faster system response time.

In terms of working principle, the AS7C34096A-15TINTR utilizes a two-transistor static RAM (SRAM) cell, which consists of two directly coupled MOS transistors. The transistor on the left is connected to the bit line (BL) and the one on the right is connected to the complementary bit line (BL*). A storage node (Node) is formed between these two transistors, where the binary data is stored. Although the traditional SRAM memory cell requires more silicon area compared to an equivalent DRAM memory cell, the two-transistor static memory cell offers faster access times and less power consumption.

The working of the AS7C34096A-15TINTR is similar to that of other SRAM devices. When a row address is applied, transistors M1 and M4 are turned on, which connect the storage node to bit line and complementary bit line, respectively. The amplifier, which is connected to bit line and complementary bit line, senses the voltage difference between them and amplifies them, thus storing the binary data. If the data stored in the memory cell is 0, the voltage on bit line and complementary bit line would be the same, while if the data is 1, the voltage on bit line and complementary bit line would be opposite.

In terms of physical package, the AS7C34096A-15TINTR comes in a TinyBGA v2.0/2.5 package, which has 0.8 mm ball pitch and 1.0 mm ball size. The SRAM can operate over the commercial temperature range of 0°C to 70°C, and the extended temperature range of -40°C to +85°C. In terms of reliability, this product features a 20-year data retention, 100K ECC write cycles, and 10K program/erase cycles.

In conclusion, the AS7C34096A-15TINTR is an ideal memory solution for an array of embedded and portable applications that require reduced power consumption, high-speed operation and reliability. The device’s two-transistor SRAM cell, low power consumption, fast access time, and, 16-bit wide data bus, give it a competitive edge over other memory solutions, making it a popular choice among device manufacturers.