AS7C31025C-12JIN Allicdata Electronics
Allicdata Part #:

AS7C31025C-12JIN-ND

Manufacturer Part#:

AS7C31025C-12JIN

Price: $ 1.99
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 1M PARALLEL 32SOJ
More Detail: SRAM - Asynchronous Memory IC 1Mb (128K x 8) Paral...
DataSheet: AS7C31025C-12JIN datasheetAS7C31025C-12JIN Datasheet/PDF
Quantity: 1000
250 +: $ 1.80152
500 +: $ 1.73518
1000 +: $ 1.64972
Stock 1000Can Ship Immediately
$ 1.99
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 32-SOJ
Description

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AS7C31025C-12JIN is a low-power 256K x 16 super low power SRAM packaged in a small 20-pin SOIC package. It is mainly used in digital electronic products and systems, such as computers, telephones, portable multimedia equipment, communication products and other digital, analog and embedded systems. The application field of this type of SRAM, as well as its working principle and design, are discussed in detail below.

Application Field

The AS7C31025C-12JIN can be used in a wide variety of applications. In digital products, this type of SRAM is ideal for use as cache memory, allowing higher data transfer speeds, as well as for low-power applications. Additionally, in embedded systems, this type of SRAM can be used for code storage and run-time data storage. In analog systems, this type of SRAM can be used for storing sensor data or image data.

It can also be used in portable media applications, as it is small, low-power and reliable. Furthermore, it is used in automotive systems, enabling safer operation. This type of SRAM can also be used in satellite communication equipment and mission critical applications, such as aerospace systems and medical devices. Finally, it is also used for industrial automation controls and other industrial applications.

Working Principle

The AS7C31025C-12JIN uses a standard SRAM design to save information. A standard SRAM memory consists of a number of cells, which are essentially miniature transistors. Each cell consists of two transistors connected to form one bit of memory with a pull-up resistor. When the voltage is applied to one of the two transistors, it opens, allowing current to flow through the other transistor. This is how an SRAM cell stores information.

Data is written to the SRAM by setting the voltage of each bit to either 0V or 5V. The SRAM can then be read by detecting the voltage level of each bit. When the voltage of a bit is 0V, it is read as a 0; and when it is 5V, it is read as a 1. The data stored in the SRAM cells is kept in the memory, even when power is removed.

Design

The AS7C31025C-12JIN is designed to provide high performance with low power consumption. It uses a multi-layer data bus to minimize power dissipation and maximize performance. Additionally, it has an input/output interface which is compatible with both 3.3V and 5V logic systems. The SRAM also has an advanced on-chip feature, which reduces power consumption by sensing the power supply and entering a low-power self-refresh mode when not in use.

Additionally, the SRAM has an internal power-on-reset and can operate over a wide temperature range, from -40 to +85 degrees Celsius. It also has an error-detection feature, which can detect and correct most single bit errors. Finally, a watchdog timer and adjustable timing parameters ensure reliable operation.

The AS7C31025C-12JIN is a low-power, high performance SRAM that is suitable for a wide range of applications. It has a wide operating temperature range, low power consumption, and an advanced on-chip feature to reduce power dissipation. Its small size makes it ideal for portable applications and its error-detection feature ensures reliable operation. With its wide range of features, this type of SRAM is well-suited for a variety of digital, analog, and embedded applications.

The specific data is subject to PDF, and the above content is for reference

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