AS7C1024B-15TJCNTR Allicdata Electronics
Allicdata Part #:

AS7C1024B-15TJCNTR-ND

Manufacturer Part#:

AS7C1024B-15TJCNTR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 1M PARALLEL 32TSOP
More Detail: SRAM - Asynchronous Memory IC 1Mb (128K x 8) Paral...
DataSheet: AS7C1024B-15TJCNTR datasheetAS7C1024B-15TJCNTR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP
Description

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Memory is a form of electronic data storage, usually used for saving and storing vital data and performing efficient data processing operations. The most commonly used form of memory is Random Access Memory (RAM) which, unlike other forms of memory, can be both read and written to in any order and provides a fast and economical way to perform data-intensive tasks. For larger, more specialized applications, there are designs and systems that offer a multitude of storage options such as Flash, Static RAM (SRAM) and Static Random Access Memory (SRAM).

The AS7C1024B-15TJCNTR is a high performance monolithic static RAM that is available in a 1.8V / 3.3V dual supply version and provides high-speed read/write with single cycle capabilities. It has a fast access time of 15 ns and its array consists of 2048 words by 8 bits. The device offers low power consumption with full-voltage operation mode, on-chip advanced write protection and super-fast page mode operation. It is a non-volatile memory that stores data even after power is removed and is capable of retaining its data content over an extended period of time.

The AS7C1024B-15TJCNTR is suitable for a wide range of applications, including microcontrollers, embedded systems, telecommunications, networking, and industrial applications. It provides data speeds up to 8M bits/sec (random access) and 100ns processor-to-processor access times. In terms of power consumption, it is extremely efficient and has an ultra-low standby mode, allowing for an extended use in portable applications.

The AS7C1024B-15TJCNTR consists of a static RAM cell array, with each cell containing a six-transistor (6T) latch multiplexer circuit. The output from the cell array is fed directly to the Data Outputs (DQs).The device is controlled by a variety of write and read operations initiated by the "read" (RD) and "write" (WR) signals. SERIAL SCLK and CS are used for communication.

The AS7C1024B-15TJCNTR provides high write and read throughput with a single cycle capability. This allows for faster data transfer between the main system memory and the memory. Data is written to the memory cells via a single write command, and read data is read out simultaneously. This single-cycle feature eliminates any wait states associated with other memory types and increases the overall system performance.

The AS7C1024B-15TJCNTR also provides advanced write protection and error management techniques. This allows the device to identify and flag faulty bits so they can be corrected or replaced. These techniques also help ensure that data integrity and accuracy are maintained, even in mission-critical applications.

In summary, the AS7C1024B-15TJCNTR is a high-speed, low-power Static RAM device that provides a reliable and efficient method for storing and retrieving data. Its advanced features and error management techniques offer superior performance with excellent data integrity, making it an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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